Next-generation mid-infrared sources
The mid-infrared (mid-IR) is a wavelength range with a variety of technologically vital
applications in molecular sensing, security and defense, energy conservation, and …
applications in molecular sensing, security and defense, energy conservation, and …
Progress in infrared photodetectors since 2000
C Downs, TE Vandervelde - Sensors, 2013 - mdpi.com
The first decade of the 21st-century has seen a rapid development in infrared photodetector
technology. At the end of the last millennium there were two dominant IR systems, InSb-and …
technology. At the end of the last millennium there were two dominant IR systems, InSb-and …
InAsSb-based infrared photodetectors: Thirty years later on
A Rogalski, P Martyniuk, M Kopytko, P Madejczyk… - Sensors, 2020 - mdpi.com
In 1989, one author of this paper (AR) published the very first review paper on InAsSb
infrared detectors. During the last thirty years, many scientific breakthroughs and …
infrared detectors. During the last thirty years, many scientific breakthroughs and …
Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices
Long-wave infrared InAs/InAsSb type-II superlattice nBn photodetectors are demonstrated
on GaSb substrates. The typical device consists of a 2.2 μm thick absorber layer and has a …
on GaSb substrates. The typical device consists of a 2.2 μm thick absorber layer and has a …
[HTML][HTML] Mid-wavelength infrared high operating temperature pBn photodetectors based on type-II InAs/InAsSb superlattice
A high operating temperature mid-wavelength infrared pBn photodetector based on the type-
II InAs/InAsSb superlattice on a GaSb substrate has been demonstrated. At 150 K, the …
II InAs/InAsSb superlattice on a GaSb substrate has been demonstrated. At 150 K, the …
[HTML][HTML] Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy
PT Webster, NA Riordan, S Liu… - Journal of Applied …, 2015 - pubs.aip.org
The structural and optical properties of lattice-matched InAs 0.911 Sb 0.089 bulk layers and
strain-balanced InAs/InAs 1− x Sb x (x∼ 0.1–0.4) superlattices grown on (100)-oriented …
strain-balanced InAs/InAs 1− x Sb x (x∼ 0.1–0.4) superlattices grown on (100)-oriented …
High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection
Very long wavelength infrared photodetectors based on InAs/InAsSb type-II superlattices are
demonstrated on GaSb substrate. A heterostructure photodiode was grown with 50% cut-off …
demonstrated on GaSb substrate. A heterostructure photodiode was grown with 50% cut-off …
[HTML][HTML] Recent trends in 8–14 μm type-II superlattice infrared detectors
Abstract Type-II superlattices (T2SLs) hold enormous potential for next-generation 8–14 μm
long-wavelength infrared (LWIR) detectors for use at high operating temperature (HOT). The …
long-wavelength infrared (LWIR) detectors for use at high operating temperature (HOT). The …
InAs/InAsSb type-II strained-layer superlattice infrared photodetectors
DZ Ting, SB Rafol, A Khoshakhlagh, A Soibel, SA Keo… - Micromachines, 2020 - mdpi.com
The InAs/InAsSb (Gallium-free) type-II strained-layer superlattice (T2SLS) has emerged in
the last decade as a viable infrared detector material with a continuously adjustable band …
the last decade as a viable infrared detector material with a continuously adjustable band …
High performance Zn-diffused planar mid-wavelength infrared type-II InAs/InAs1− xSbx superlattice photodetector by MOCVD
We report a Zn-diffused planar mid-wavelength infrared photodetector based on type-II
InAs/InAs 1− x Sb x superlattices. Both the superlattice growth and Zn diffusion were …
InAs/InAs 1− x Sb x superlattices. Both the superlattice growth and Zn diffusion were …