A comprehensive review of semiconductor ultraviolet photodetectors: from thin film to one-dimensional nanostructures
Ultraviolet (UV) photodetectors have drawn extensive attention owing to their applications in
industrial, environmental and even biological fields. Compared to UV-enhanced Si …
industrial, environmental and even biological fields. Compared to UV-enhanced Si …
Nanoarchitechtonics of Visible‐Blind Ultraviolet Photodetector Materials: Critical Features and Nano‐Microfabrication
Accurate measurement of ultraviolet radiation is key to many technologies including
wearable devices for skin cancer prevention, optical communication systems, and missile …
wearable devices for skin cancer prevention, optical communication systems, and missile …
Large-area 4H-SiC ultraviolet avalanche photodiodes based on variable-temperature reflow technique
X Zhou, T Han, Y Lv, J Li, W Lu, Y Wang… - IEEE Electron …, 2018 - ieeexplore.ieee.org
In this letter, we report high-performance 4H-SiC separated absorption charge multiplication
ultraviolet (UV) avalanche photodiodes (APDs) with a large active area (800-μm diameter) …
ultraviolet (UV) avalanche photodiodes (APDs) with a large active area (800-μm diameter) …
Self-powered silicon carbide ultraviolet photodetector via gold nanoparticle plasmons for sustainable optoelectronic applications
MA Yildirim, K Teker - Physica Scripta, 2022 - iopscience.iop.org
In recent years, it is becoming inevitable to design/construct eco-friendly sustainable
electronic and photonic devices to minimize the footprints of these as part of the fight against …
electronic and photonic devices to minimize the footprints of these as part of the fight against …
Wavelength-selective 4H-SiC UV-sensor array
CD Matthus, AJ Bauer, L Frey, T Erlbacher - Materials Science in …, 2019 - Elsevier
In this work, monolithically integrated wavelength-selective 4H-SiC UV-sensor arrays were
manufactured using two photolithography masks and only one implantation sequence …
manufactured using two photolithography masks and only one implantation sequence …
[PDF][PDF] ZnO NW 栅极GaN HEMT 紫外光探测性能
朱彦旭， 谭张杨， 王晓冬 - 电子学报, 2023 - ejournal.org.cn
本文实验采用水热生长法, 成功制备了以ZnO 纳米线为光感应栅极的高电子迁移率晶体管HEMT
(High Electron Mobility Transistor) 器件. 对HEMT 进行源漏(S/D) 下刻蚀, 刻蚀深度为120/150 …
(High Electron Mobility Transistor) 器件. 对HEMT 进行源漏(S/D) 下刻蚀, 刻蚀深度为120/150 …
Silicon carbide and graphene based UV-IR dual-color detector
C Zeng, W Lin, Y Sun, Q Cui, X Zhang, S Li… - Optoelectronics …, 2019 - Springer
An ultraviolet-infrared dual-color detector is proposed and realized based on the vertical
integration of single-layer graphene and a 4H-SiC layer by semiconductor micro-fabrication …
integration of single-layer graphene and a 4H-SiC layer by semiconductor micro-fabrication …
Enhancing the Ultraviolet Photocurrent and Response Speed of Zinc Oxide Nanoflowers using Surface Plasmons of Gold Nanoparticles and a Graphene Membrane
Y Zhao, H Zhang, X Wu, Y Yang… - physica status solidi …, 2021 - Wiley Online Library
The enhancement effect of the plasmonic resonance of AuNPs and a graphene membrane
on the optoelectronic properties of ZnO nanoflowers is investigated. A layered structure is …
on the optoelectronic properties of ZnO nanoflowers is investigated. A layered structure is …
Effects of ultraviolet illumination on 4H-SiC Schottky barrier diodes irradiated by swift heavy ions
In this study, the capacitance-voltage (CV) and current-voltage (IV) characteristics of 4H-SiC
Schottky barrier diode (SBD) irradiated by swift heavy ions (SHI) are studied under different …
Schottky barrier diode (SBD) irradiated by swift heavy ions (SHI) are studied under different …
4H-SiC 基紫外光电探测器的研究进展
蔡加法， 吴正云 - 量子电子学报, 2014 - lk.hfcas.ac.cn
£•§ß¶©® ô ™≠©$Æ D≠Æ •!¶©® ô" ™≠©$Æ D≠™Ú# D≠™Ø Page 1 †¢ §£¶ • †¢ ß© ® !
§£# "$ % ß &('£)ß1 03 21 4 576¶89"¶@7AB@D CFEHGPI$"¶QPRS EHTV UHG¶QP"¶WXGPY` …
§£# "$ % ß &('£)ß1 03 21 4 576¶89"¶@7AB@D CFEHGPI$"¶QPRS EHTV UHG¶QP"¶WXGPY` …