Inventive concepts describe a method for high performance standard cell design techniques
in FinFET based library using LLE. Inventive concepts describe a fabrication pro cess using …

A method of forming a semiconductor device includes providing a starting structure including
a substrate having thereon a plurality of gate regions alternately arranged with a plurality of …

ABSTRACT A semiconductor device and a method for manufacturing the same are
disclosed. The method comprises forming active patterns on a substrate that includes first …

In some aspects, a method for performing analog matrix inversion on a matrix with a network
of resistive device arrays B, W, Q, and C is described. The method may include initializing …

Methods of forming a diffusion break are disclosed. The method includes forming a diffusion
break after source/drain formation, by removing a gate stack of the dummy gate to a buried …

In this article we present three 6-track standard cell libraries based on ASAP7 PDK which is
extended to include three technologies, contacts over active gates (COAG), fin depopulation …

(57) ABSTRACT A double diffusion break (DDB) gate structure is provided by removing the
vestigial antenna to provide a space and the space is filled, at least in part, with an interlevel …

In this paper we present several approaches to improving pin accessibility of standard cells
designed with ASAP7 PDK. These approaches are refining pin layout, using double-row …

A semiconductor device comprising a first field insulating film around at least a part of a first
fin type pattern and at least a part of a second fin type pattern, a second field insulating film …

Aspects disclosed herein include circuits employing a double diffusion break (DDB) and a
single diffusion break (SDB) in different type diffusion regions, and related fabri cation …