First principles calculation of spin-related quantities for point defect qubit research

V Ivády, IA Abrikosov, A Gali - npj Computational Materials, 2018 - nature.com
Point defect research in semiconductors has gained remarkable new momentum due to the
identification of special point defects that can implement qubits and single photon emitters …

Atomic clock transitions in silicon-based spin qubits

G Wolfowicz, AM Tyryshkin, RE George… - Nature …, 2013 - nature.com
A major challenge in using spins in the solid state for quantum technologies is protecting
them from sources of decoherence. This is particularly important in nanodevices where the …

Probing the coherence of solid-state qubits at avoided crossings

M Onizhuk, KC Miao, JP Blanton, H Ma, CP Anderson… - PRX Quantum, 2021 - APS
Optically addressable paramagnetic defects in wide-band-gap semiconductors are
promising platforms for quantum communications and sensing. The presence of avoided …

Decoherence and dynamical decoupling control of nitrogen vacancy center electron spins in nuclear spin baths

N Zhao, SW Ho, RB Liu - Physical Review B—Condensed Matter and …, 2012 - APS
We theoretically study the decoherence and the dynamical decoupling control of nitrogen
vacancy center electron spins in high-purity diamond, where the hyperfine interaction with …

Donor spins in silicon for quantum technologies

A Morello, JJ Pla, P Bertet… - Advanced Quantum …, 2020 - Wiley Online Library
Dopant atoms are ubiquitous in semiconductor technologies, providing the tailored
electronic properties that underpin the modern digital information era. Harnessing the …

[HTML][HTML] Electron spin resonance spectroscopy with femtoliter detection volume

V Ranjan, S Probst, B Albanese, T Schenkel… - Applied Physics …, 2020 - pubs.aip.org
We report electron spin resonance measurements of donors in silicon at millikelvin
temperatures using a superconducting LC planar micro-resonator and a Josephson …

The initialization and manipulation of quantum information stored in silicon by bismuth dopants

GW Morley, M Warner, AM Stoneham, PT Greenland… - Nature materials, 2010 - nature.com
A prerequisite for exploiting spins for quantum data storage and processing is long spin
coherence times. Phosphorus dopants in silicon (Si: P) have been favoured,,,,,,,,, as hosts for …

In situ amplification of spin echoes within a kinetic inductance parametric amplifier

W Vine, M Savytskyi, A Vaartjes, A Kringhøj… - Science …, 2023 - science.org
The use of superconducting microresonators together with quantum-limited Josephson
parametric amplifiers has enhanced the sensitivity of pulsed electron spin resonance (ESR) …

Electron spin coherence and electron nuclear double resonance of Bi donors in natural Si

RE George, W Witzel, H Riemann, NV Abrosimov… - Physical Review Letters, 2010 - APS
Donors in silicon hold considerable promise for emerging quantum technologies, due to
their uniquely long electron spin coherence times. Bismuth donors in silicon differ from more …

Nuclear spin quantum memory in silicon carbide

B Tissot, M Trupke, P Koller, T Astner, G Burkard - Physical Review Research, 2022 - APS
Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for
applications in quantum technology. Some TM defects, eg, vanadium, emit in one of the …