In order to realize 250–350-nm-band high-efficiency deep ultraviolet (UV) emitting devices
using group-III-nitride materials, it is necessary to obtain high-efficiency UV emission from …

We report a low-temperature photoluminescence study of 4H/3C/4H-SiC single quantum
wells. A quantum well consists of thirteen 3C-SiC bilayers as displayed in a high-resolution …

Optical properties of blue AlInGaN/InGaN quantum well (QW) structures with a quaternary
AlInGaN well layer were investigated by using the non-Markovian gain model with many …

Electronic and optical properties of In Ga N∕ In Al Ga N quantum well with zero internal field
were investigated by using the non-Markovian gain model with many-body effects. The In …

Shift of the transition energy after pulsed optical excitation in Al 0.35 Ga 0.65 N∕ Al 0.49 Ga
0.51 N quantum well (QW) structures with varying well width has been studied by time …

High-pressure and time-resolved studies of the optical emission from n-type doped GaN/AlN
multi-quantum-wells (MQWs) with various well thicknesses are analysed in comparison with …

A detailed numerical calculation on the phonon-assisted intersubband transition rates of
electrons in wurtzite GaN/In x Ga 1− x N quantum wells is presented. The quantum-confined …

Intrinsic electric fields in Al x Ga 1− x N∕ Al y Ga 1− y N quantum wells embedded into pin
structures are studied using photoluminescence experiments. Spectral shifts induced by …

Spontaneous emission and optical gain characteristics of blue InGaAlN/InGaN quantum well
(QW) structures with reduced internal field were investigated by using the non-Markovian …

Optical properties of pseudopolarization-matched green AlInGaN/InGaN quantum-well
structures with a quaternary AlInGaN well layer were investigated by using non-Markovian …