Epitaxial fluorides have attracted attention in recent years because of the many potential microelectronic and optoelectronic device applications of semiconductor/epitaxial …
The bonding at the interface between calcium fluoride and the silicon (111) surface has been studied with surface-sensitive core-level photoemission spectroscopy. The interface is …
M Ishida, I Katakabe, T Nakamura, N Ohtake - Applied physics letters, 1988 - pubs.aip.org
Heteroepitaxial Al2O3 films were grown successfully on (100) Si substrates at substrate temperatures above 1000° C by low‐pressure chemical vapor deposition with the use of N2 …
H Zogg, S Blunier, A Fach, C Maissen, P Müller… - Physical Review B, 1994 - APS
The thermal mismatch strain in stacks containing PbSe, BaF 2, and/or CaF 2 on Si (111) substrates is relieved by the glide of dislocations in the principal< 110>{100} glide system …
Amorphous alumina films with a film thickness of 0.35–2.0 μm were prepared on glass and silicon substrates by low-pressure metal–organic chemical vapor deposition using …
S Blunier, H Zogg, C Maissen, AN Tiwari, RM Overney… - Physical review …, 1992 - APS
Atomic force microscopy reveals straight slip steps resulting from dislocation glide in the primary {100}< 110> glide system in ''low mismatch''CaF 2/Si (111) structures. From the …
M Sugiyama, M Oshima - Microelectronics journal, 1996 - Elsevier
E pitaxial insulator,; have a potential for use in microelectronic and optoelectronic device applications such as a semiconductor-oninsulator (SOl) structure, three-dimensional …
H Wilkens, O Schuckmann, R Oelke… - Physical Chemistry …, 2013 - pubs.rsc.org
The structural changes of a (111) oriented CeO2 film grown on a Si (111) substrate covered with a hex-Pr2O3 (0001) interface layer due to post deposition annealing are investigated. X …
J Rodewald, J Thien, K Ruwisch, T Pohlmann… - Nanomaterials, 2024 - mdpi.com
Off-stoichiometric NixFe3− xO4 ultrathin films (x< 2.1) with varying Ni content x and thickness 16 (±2) nm were grown on MgO (001) by reactive molecular beam epitaxy. Synchrotron …