Growth and characterization of single crystal insulators on silicon

LJ Schowalter, RW Fathauer - Critical Reviews in Solid State and …, 1989 - Taylor & Francis
Epitaxial insulators have a number of potential applications in the semiconductor industry.
These include semiconductor-on-insulator (SOI) structures, three-dimensional (3-D) and/or …

Fluoride/semiconductor and semiconductor/fluoride/semiconductor heteroepitaxial structure research: A review

S Sinharoy - Thin Solid Films, 1990 - Elsevier
Epitaxial fluorides have attracted attention in recent years because of the many potential
microelectronic and optoelectronic device applications of semiconductor/epitaxial …

Photoemission study of bonding at the -on-Si(111) interface

MA Olmstead, RIG Uhrberg, RD Bringans… - Physical Review B, 1987 - APS
The bonding at the interface between calcium fluoride and the silicon (111) surface has
been studied with surface-sensitive core-level photoemission spectroscopy. The interface is …

Epitaxial Al2O3 films on Si by low‐pressure chemical vapor deposition

M Ishida, I Katakabe, T Nakamura, N Ohtake - Applied physics letters, 1988 - pubs.aip.org
Heteroepitaxial Al2O3 films were grown successfully on (100) Si substrates at substrate
temperatures above 1000° C by low‐pressure chemical vapor deposition with the use of N2 …

Thermal-mismatch-strain relaxation in epitaxial , /, and PbSe// layers on Si(111) after many temperature cycles

H Zogg, S Blunier, A Fach, C Maissen, P Müller… - Physical Review B, 1994 - APS
The thermal mismatch strain in stacks containing PbSe, BaF 2, and/or CaF 2 on Si (111)
substrates is relieved by the glide of dislocations in the principal< 110>{100} glide system …

Growth and properties of alumina films obtained by low-pressure metal–organic chemical vapor deposition

DH Kuo, BY Cheung, RJ Wu - Thin Solid Films, 2001 - Elsevier
Amorphous alumina films with a film thickness of 0.35–2.0 μm were prepared on glass and
silicon substrates by low-pressure metal–organic chemical vapor deposition using …

Lattice and thermal misfit dislocations in epitaxial /Si(111) and -/Si(111) structures

S Blunier, H Zogg, C Maissen, AN Tiwari, RM Overney… - Physical review …, 1992 - APS
Atomic force microscopy reveals straight slip steps resulting from dislocation glide in the
primary {100}< 110> glide system in ''low mismatch''CaF 2/Si (111) structures. From the …

MBE growth of fluorides

M Sugiyama, M Oshima - Microelectronics journal, 1996 - Elsevier
E pitaxial insulator,; have a potential for use in microelectronic and optoelectronic device
applications such as a semiconductor-oninsulator (SOl) structure, three-dimensional …

Structural transitions of epitaxial ceria films on Si (111)

H Wilkens, O Schuckmann, R Oelke… - Physical Chemistry …, 2013 - pubs.rsc.org
The structural changes of a (111) oriented CeO2 film grown on a Si (111) substrate covered
with a hex-Pr2O3 (0001) interface layer due to post deposition annealing are investigated. X …

Structure-Related Electronic and Magnetic Properties in Ultrathin Epitaxial NixFe3−xO4 Films on MgO(001)

J Rodewald, J Thien, K Ruwisch, T Pohlmann… - Nanomaterials, 2024 - mdpi.com
Off-stoichiometric NixFe3− xO4 ultrathin films (x< 2.1) with varying Ni content x and thickness
16 (±2) nm were grown on MgO (001) by reactive molecular beam epitaxy. Synchrotron …