We investigated the effects of the Gibbs free energy difference (∆ G o) and distribution of
oxygen vacancies in a bilayer ZnO/ZrO 2 structure. The device exhibited high endurance …

In this letter, we report the coexistence of unipolar and bipolar switching in a solution-based
nanocrystalline spinel ferrite ZnFe 2 O 4 thin film prepared by the sol-gel method. It is seen …

Memory devices with bilayer CeO 2− x/ZnO and ZnO/CeO 2− x heterostructures sandwiched
between Ti top and Pt bottom electrodes were fabricated by RF-magnetron sputtering at …

Abstract The Ti/CeO 2/Al/CeO 2/Pt stacks as a ReRAM device exhibits bipolar and unipolar
resistive switching behaviors. The OFF/ON resistance ratio (> 10 2) in both modes is almost …

In this study, the unipolar resistive switching (URS) and bipolar resistive switching (BRS) are
demonstrated to be coexistent in the Ag/ZnO/Pt memory device, and both modes are …

We report the transition from unipolar to bipolar switching, multilevel resistive switching,
abrupt and gradual reset phenomena in a TaN/CeO 2/Ti:/Pt memory devices. Multilevel …

In this study, we fabricate a Pt/TiN/SnOx/Pt memory device using reactive sputtering to
explore its potential for neuromorphic computing. The TiON interface layer, formed when TiN …

Abstract Effect of oxygen annealing on bipolar resistive switching (BRS) properties of
TiN/ZnO/CeO 2-x/Pt devices was investigated. Bilayer ZnO/CeO 2-x thin films were …

TiN/HfO2/CeOx/TiN memristors were prepared by magnetron sputtering. To further improve
their performance, the devices were rapidly thermally annealed at different temperatures for …

Tri-state resistive switching characteristics of bilayer resistive random access memory
devices based on manganese oxide (MnO)/tantalum oxide (Ta 2 O 5) have been studied …