The biaxial modulus and coefficient of thermal expansion of ion‐beam‐sputtered
amorphous Si and Ge thin films were determined from curvature changes induced by …

A new method for the in situ measurement of the residual stresses, σR, in thin films,
thickness h, is described. It is based on the combined capability of the focused ion beam …

We review recent progress toward the development of predictive models of ion-induced
pattern formation on room-temperature silicon, with a particular emphasis on efforts to …

The biaxial modulus and the linear coefficient of thermal expansion of sputtered amorphous
Ge 4 Sb 1 Te 5, Ge 2 Sb 2 Te 5, and Ag 0.055 In 0.065 Sb 0.59 Te 0.29 thin films were …

We present the results of a crystallization study on NiTi shape memory thin films in which
amorphous films are annealed by a scanning laser. This technique has the advantage that …

In situ stress measurements during vapor deposition of metal films revealed an asymptotic
compressive stress and a reversible stress change between dynamic and relaxed surfaces …

By measuring stress and strain that build up in thin films during hydrogen absorption, the
elastic constants of the films can be determined, if a one-dimensional elastic behavior …

In this work, titanium dioxide (TiO 2) film was deposited onto the In 0.5 Ga 0.5 As/GaAs
quantum-dot structure by electron-beam evaporation to investigate its effect on interdiffusion …

The residual stress in thin films has been determined by X-ray diffraction and laser scanning
methods. The usual procedure is to measure the strain via lattice or physical curvature …

The growth of the semiconductor industry is driven by the demand for electronic products
and high transistor density. However, complex manufacturing processes generate residual …