Abstract According to the International Roadmap for Devices and Systems, gate-all-around
(GAA) metal–oxide–semiconductor field-effect transistors (MOSFETs) will become the main …

Sb-based semiconductors are critical p-channel materials for III–V complementary metal
oxide semiconductor (CMOS) technology, while the performance of Sb-based metal-oxide …

Thin vertical nanowires based on III–V compound semiconductors are viable candidates as
channel material in metal oxide semiconductor field effect transistors (MOSFETs) due to …

GaSb is considered as an attractive p-type channel material for future III-V metal-oxide-
semiconductor (MOS) technologies, but the processing conditions to utilize the full device …

The vertical gate-all-around (VGAA) metal-oxide-semiconductor field-effect transistor
(MOSFET) holds remarkable potential in the three-dimensional (3D) integrated circuits (ICs) …

III-V co-integration is less mature compared to Si/Ge CMOS due to their inferior pMOS
device performance. This letter adopts a novel quaternary InGaAsSb channel material in a …

Power dissipation has been the major challenge in the downscaling of transistor technology.
Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have struggled to keep a …

III-V MOSFETs provide improved electrostatic control at scaled gate lengths combined with a
considerable reduction in gate leakage current. Following the natural transistor evolution …