The branching fractions of the exclusive decays B 0→ K* 0 γ and B+→ K*+ γ are measured
from a sample of (22.74±0.36)× 10 6 BB decays collected with the BABAR detector at the …

A 3-D simulation of substrate currents is crucial to analyze parasitic coupling effects due to
minority carrier injection in smart power ICs. In this paper, a substrate parasitic extraction …

In junction-isolated smart power technologies, negative voltages at the drain terminal of a
power DMOS lead to minority carrier injection into the substrate. This can cause malfunction …

MIKROELEKTRONIK+ INTEGRIERTE SCHALTUNGEN; LAYOUTS/MIKROELEKTRONIK;
DOPPELT DIFFUNDIERTE TRANSISTOREN, DMOS (ELEKTRONIK); CHIPS+ …

The performance of the unbiased guard ring structure is measured and the effects of high
current, emitter area, and layout of unbiased guard rings are reported and explained …

Electrostatic discharge (ESD) continues to impact semiconductor components and systems
as technologies scale from micro-to nano-electronics. This book studies electrical …

This paper proposes a 90nm bulk BiCDMOS platform for automotive applications. In this
platform, two types of characteristic deep trench isolations are introduced. One has a top-to …

Mixed Voltage Design has become predominant in the semiconductor industry due to the
integration of high voltage and low voltage circuits in the pad ring. Latch-up characterization …

This paper proposes a methodology for circuit simulation of parasitic effects caused by
minority carrier injection into the substrate of a deep-trench based BCD technology. An …

Today circuit failures in Smart Power ICs due to substrate couplings are partially addressed
during the circuit design phase. The state-of-the-art guidelines for the optimization of …