The large amount of light emitted from a light emitting diode (LED) being trapped inside the
semiconductor structure is the consequence of the large value of the refractive index. The …

Periodic high aspect ratio GaAs nanopillars with widths in the range of 500–1000 nm are
produced by metal-assisted chemical etching (MacEtch) using n-type (100) GaAs substrates …

We report on the achievement of a new class of nanowire light emitting diodes (LEDs),
incorporating InGaN/GaN dot-in-a-wire nanoscale heterostructures grown directly on Si …

The authors report on the achievement of nearly defect-free, vertically aligned InGaN/GaN
dot-in-a-wire nanoscale heterostructures grown directly on Si (111) substrates by molecular …

Enhanced photoelectric conversion is demonstrated in a crystalline silicon (c-Si) solar cell
with frustum nanorod arrays (FNAs), fabricated using colloidal lithography and reactive-ion …

We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based
nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch …

A large enhancement of color-conversion efficiency of colloidal quantum dots in light-
emitting diodes (LEDs) with novel structures of nanorods embedded in microholes has been …

In this paper, the high performance GaN-based light-emitting diodes (LEDs) with embedded
microscale air voids and an SiO 2 nanomask by metal–organic chemical vapor deposition …

Because of the Sun's movement across the sky, broadband and omnidirectional light
harvesting is a major development in photovoltaic technology. This study reports the …

In this study, a flexible polydimethylsiloxane (PDMS) ARL with embedded ZnO‐NRs was
fabricated on the surfaces of Cu (In, Ga) Se2 (CIGS) solar cells using the chemical solution …