Spinel ZnGa2O4 has received significant attention from researchers due to its wide bandgap
and high chemical and thermal stability; hence, paving the way for it to have potential in …

Truly bulk ZnGa 2 O 4 single crystals were obtained directly from the melt. High melting point
of 1900±20 C and highly incongruent evaporation of the Zn-and Ga-containing species …

ZnGaO films were grown on c-plane sapphire substrates by metal organic chemical vapor
deposition using diethylzinc (DEZn), triethylgallium (TEGa), and oxygen. The flow rate of …

Abstract Zinc gallate (ZnGa2O4) spinel ceramics doped with Mn2+ ions was prepared by a
solid-state reaction at 1200° C in air. Manganese concentration was equal to 0.05 mol.% of …

Due to the ultra-wideband gap, high transmittance in the ultraviolet (UV) region, and
excellent environmental stability, zinc gallium oxide (ZnGa 2 O 4) has attracted considerable …

Abstract The ZnGa 2 O 4: Mn 2+/Cr 3+ ceramic phosphor is synthesized via high
temperature solid state reaction method and then phosphor is intensively studied for …

The complex‐oxide materials are multifunctional materials, which have wide applications to
the semiconductor and microelectronic fields. The ZnGa2O4 having a wide bandgap of 5.1 …

This work discusses the growth characteristics, composition, and photoluminescence
properties of Zn-doped Ga 2 O 3 (ZnGaO) films. The idea of doping of Zn divalent cation in β …

Abstract Al-doped ZnGa 2 O 4 (ZAGO) thin film phosphors were grown on the c-plane
sapphire substrates by co-sputtering of ceramic ZnGa 2 O 4 (ZGO) and metallic Al targets …

In this study, the transparent glass-ceramics containing spinel ZnGa 2 O 4 nanocrystals were
obtained by controlling crystallization. XRD, SEM, and TEM results show that after heat …