High mobility amorphous indium-gallium-zinc-oxide thin-film transistor by aluminum oxide passivation layer
This letter demonstrates a high-mobility amorphous indium-gallium-zinc oxide (a-IGZO) thin-
film transistor (TFT) with aluminum oxide (Al 2 O 3) passivation layer by radio frequency (RF) …
film transistor (TFT) with aluminum oxide (Al 2 O 3) passivation layer by radio frequency (RF) …
Pyramid-shaped single-crystalline nanostructure of molybdenum with excellent mechanical, electrical, and optical properties
Y Shen, Y Han, R Zhan, X Chen, S Wen… - … applied materials & …, 2020 - ACS Publications
Specific geometric morphology and improved crystalline properties are of great significance
for the development of materials in micro–nano scale. However, for high-melting …
for the development of materials in micro–nano scale. However, for high-melting …
Effect of post treatment for Cu-Cr source/drain electrodes on a-IGZO TFTs
We report a high-performance amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film
transistor (TFT) with new copper-chromium (Cu-Cr) alloy source/drain electrodes. The TFT …
transistor (TFT) with new copper-chromium (Cu-Cr) alloy source/drain electrodes. The TFT …
Positive gate bias stress-induced hump-effect in elevated-metal metal–oxide thin film transistors
DY Qi, DL Zhang, MX Wang - Chinese Physics B, 2017 - iopscience.iop.org
Under the action of a positive gate bias stress, a hump in the subthreshold region of the
transfer characteristic is observed for the amorphous indium–gallium–zinc oxide thin film …
transfer characteristic is observed for the amorphous indium–gallium–zinc oxide thin film …
The effect of passivation-layer process to amorphous InGaZnO thin-film transistors using back-channel etch method
Y Xie, K Cai, P Chen, H Jian, J Weng… - … Science and Technology, 2022 - iopscience.iop.org
In this work, based on the channel damage caused by source/drain etching and passivation-
layer deposition, the effects of the passivation-layer process on amorphous InGaZnO (a …
layer deposition, the effects of the passivation-layer process on amorphous InGaZnO (a …
Contact resistance asymmetry of amorphous indium–gallium–zinc–oxide thin-film transistors by scanning Kelvin probe microscopy
In this work, a method based on scanning Kelvin probe microscopy is proposed to
separately extract source/drain (S/D) series resistance in operating amorphous indium …
separately extract source/drain (S/D) series resistance in operating amorphous indium …
[PDF][PDF] 铟镓锌氧薄膜晶体管的悬浮栅效应研究
覃婷， 黄生祥， 廖聪维， 于天宝， 罗衡， 刘胜， 邓联文 - 物理学报, 2017 - wulixb.iphy.ac.cn
为了避免光照对铟镓锌氧薄膜晶体管(InGaZnO thin film transistors, IGZO TFTs)
电学特性的影响, IGZO TFT 要增加遮光金属层. 本文研究了遮光金属栅极悬浮时, IGZO TFT …
电学特性的影响, IGZO TFT 要增加遮光金属层. 本文研究了遮光金属栅极悬浮时, IGZO TFT …