Pyroelectric materials for uncooled infrared detectors: processing, properties, and applications
MD Aggarwal, AK Batra, P Guggilla, ME Edwards… - 2010 - ntrs.nasa.gov
Uncooled pyroelectric detectors find applications in diverse and wide areas such as
industrial production; automotive; aerospace applications for satellite-borne ozone sensors …
industrial production; automotive; aerospace applications for satellite-borne ozone sensors …
Application of lithium tantalate (LiTaO3) films as light sensor to monitor the light status in the Arduino Uno based energy-saving automatic light prototype and passive …
Growth of LiTaO3 film on a type-p silicon substrate (100) was conducted using the Chemical
Solution Deposition (CSD) and spin coating methods at a speed of 3000 rpm for 30 …
Solution Deposition (CSD) and spin coating methods at a speed of 3000 rpm for 30 …
Characterization of Ba0.55Sr0.45TiO3 films as light and temperature sensors and its implementation on automatic drying system model
abstract The growth of Ba0. 55Sr0. 45TiO3 films on p-type silicon substrate with depletion
and enhancement treatments have been conducted in this research. The aims were to …
and enhancement treatments have been conducted in this research. The aims were to …
Guide to the Literature of Piezoelectricity and Pyroelectricity. 23
SB Lang - Ferroelectrics, 2005 - Taylor & Francis
A bibliography is given containing 2067 references published during 2002 and 2003 on
piezoelectric and pyroelectric properties of materials and their applications. It contains …
piezoelectric and pyroelectric properties of materials and their applications. It contains …
Characterization of Optical and Structural of Lanthanum Doped LiTaO3 Thin Films
Undoped, 5%, and 10% lanthanum doped lithium tantalate thin films were annealed at 550°
C temperature for 12.5 hours and their properties were characterized. The results showed …
C temperature for 12.5 hours and their properties were characterized. The results showed …
Development of lithium tantallite (LiTaO3) for automatic switch on LAPAN-IPB Satellite infra-red sensor
A Ismangil, RP Jenie - Procedia Environmental Sciences, 2015 - Elsevier
Automatic switch is an automatic electrical device that uses sensor technology to detect
movement, or body temperature that was detected in the switch. The sensor uses passive …
movement, or body temperature that was detected in the switch. The sensor uses passive …
Optical and structural properties of lanthanum doped lithium niobate thin films
Irzaman, H Sitompul, Masitoh, M Misbakhusshudur… - …, 2016 - Taylor & Francis
Optical and structural properties of lanthanum doped LiNbO3 thin films which were
deposited on p-type Si (100) by using the Chemical Solution Deposition method have been …
deposited on p-type Si (100) by using the Chemical Solution Deposition method have been …
The Effect of Ba/Sr Ratio on Electrical and Optical Properties of BaxSr(1-x)TiO3 (x = 0.25; 0.35; 0.45; 0.55) Thin Film Semiconductor
Ferroelectric BaxSr (1-x) TiO3 thin film semiconductors with Ba/Sr ratio deposited on silicon
using chemical solution deposition (CSD) method have been investigated, followed by …
using chemical solution deposition (CSD) method have been investigated, followed by …
Electrical properties of photodiode Ba 0.25 Sr 0.75 TiO 3 (BST) thin film doped with ferric oxide on p-type Si (100) substrate using chemical solution deposition method
I Irzaman, H Syafutra, H Darmasetiawan… - Atom …, 2011 - atomindonesia.brin.go.id
In this paper we have grown pure Ba 0.25 Sr 0.75 TiO 3 (BST) and BST doped by Ferric
Oxide Fe 2 O 3 (BFST) with doping variations of 5%, 10%, and 15% above type-p Silicon …
Oxide Fe 2 O 3 (BFST) with doping variations of 5%, 10%, and 15% above type-p Silicon …
Formation of solar cells based on (BST) ferroelectric thick film
Growth of Ba 0.5 Sr 0.5 TiO 3 (BST) 1 M thick films are conducted with variation of annealing
hold time of 8 hours, 15 hours, 22 hours, and 29 hours at a constant temperature of 850° C …
hold time of 8 hours, 15 hours, 22 hours, and 29 hours at a constant temperature of 850° C …