CMOS inverter as analog circuit: An overview

W Bae - Journal of Low Power Electronics and Applications, 2019 - mdpi.com
Since the CMOS technology scaling has focused on improving digital circuit, the design of
conventional analog circuits has become more and more difficult. To overcome this …

A scalable 0.128–1 Tb/s, 0.8–2.6 pJ/bit, 64-lane parallel I/O in 32-nm CMOS

M Mansuri, JE Jaussi, JT Kennedy… - IEEE Journal of solid …, 2013 - ieeexplore.ieee.org
A scalable 64-lane chip-to-chip I/O, with per-lane data rate of 2-16 Gb/s is demonstrated in
32-nm low-power CMOS technology. At maximum aggregate bandwidth of 1.024 Tb/s …

Design techniques for decision feedback equalisation of multi‐giga‐bit‐per‐second serial data links: a state‐of‐the‐art review

F Yuan, AR AL‐Taee, A Ye… - IET Circuits, Devices & …, 2014 - Wiley Online Library
This study provides a comprehensive review of decision feedback equalisation (DFE) for
multi‐giga‐bit‐per‐second (Gbps) data links. The state‐of‐the‐art of DFE for multi‐Gbps …

A case for packageless processors

S Pal, D Petrisko, AA Bajwa, P Gupta… - … symposium on high …, 2018 - ieeexplore.ieee.org
Demand for increasing performance is far outpacing the capability of traditional methods for
performance scaling. Disruptive solutions are needed to advance beyond incremental …

A 1.8 pJ/bit Source-Synchronous Parallel Interface in 32 nm SOI CMOS with Receiver Redundancy for Link Recalibration

TO Dickson, Y Liu, A Agrawal… - IEEE Journal of Solid …, 2016 - ieeexplore.ieee.org
A source-synchronous I/O architecture is reported that includes redundant receiver lanes to
enable lane recalibration with reduced power and area overhead. Key features and …

26.4 A 25.6 Gb/s differential and DDR4/GDDR5 dual-mode transmitter with digital clock calibration in 22nm CMOS

TC Hsueh, G Balamurugan, J Jaussi… - … Solid-State Circuits …, 2014 - ieeexplore.ieee.org
A wide range of memory configurations exist in today's high-speed digital systems to meet
platform-specific bandwidth, power, capacity, and cost constraints. In the near term, DDR4 …

A 25-Gb/s Single-Ended PAM-4 Receiver With Time-Windowed LSB Decoder for High-Speed Memory Interfaces

Y Choi, H Park, J Choi, J Sim, Y Kwon… - IEEE Journal of Solid …, 2022 - ieeexplore.ieee.org
This article presents a 25-Gb/s single-ended four-level pulse-amplitude modulation (PAM-4)
receiver with a time-windowed least significant bit (LSB) decoder for high-speed memory …

A 15–22 Gbps serial link in 28 nm CMOS with direct DFE

V Balan, O Oluwole, G Kodani, C Zhong… - IEEE Journal of Solid …, 2014 - ieeexplore.ieee.org
A half-duplex serial link design that is capable of 22 Gbps operation over PCB channels with
up to 20 dB of loss is presented. A current-mode transmitter can be configured either as a …

An FFE transmitter which automatically and adaptively relaxes impedance matching

M Choi, S Lee, M Lee, JH Lee, JY Sim… - IEEE Journal of Solid …, 2018 - ieeexplore.ieee.org
This paper proposes the first feed-forward equalizing transmitter (Tx) which adaptively
relaxes impedance matching. Using an on-chip time-domain reflectometer monitor, the Tx …

A 0.9-to 8-GHz VCO with a differential active inductor for multistandard wireline SerDes

KH Cheng, CL Hung, CSA Gong, JC Liu… - … on Circuits and …, 2014 - ieeexplore.ieee.org
This study demonstrates a wide frequency tuning range LC voltage-controlled oscillator (LC-
VCO) with an active inductor in a 90-nm CMOS process. As the proposed LC-VCO is …