Two-dimensional semiconductors can be used to build next-generation electronic devices
with ultrascaled channel lengths. However, semiconductors need to be integrated with high …

Aggressive gate-length downscaling of the metal-oxide-semiconductor field-effect transistor
(MOSFET) has been the main stimulus for the growth of the integrated circuit industry. This …

We have achieved aggressive reduction of VT variation and V DD-min by a sophisticated
planar bulk MOSFET named 'Deeply Depleted Channel™(DDC)'. The DDC transistor has …

In this work we investigate the effect of ground plane (GP) on analog figures of merit (FoM) of
ultra-thin body and thin buried oxide (UTBB) SOI MOSFETs. Based on experimental devices …

This work presents a detailed characterization of 28 nm FDSOI CMOS process at cryogenic
temperatures. Electrostatic, Analog and RF Figures of Merit (FoM) are studied. At liquid …

FinFETs and ultrathin body and buried oxide fully depleted silicon on insulator (UTBB-
FDSOI) are the main transistors currently used in advanced integrated circuits (ICs). The …

Performances of high-frequency integrated circuits are directly linked to the analog and high
frequency characteristics of the transistors, the quality of the back-end of line process as well …

This paper presents a comprehensive overview of the research done in the last decade on
planar Fully-Depleted-Silicon-On-Insulator (FDSOI) technologies in the frame of the joint …

Memory cells and methods of forming memory cells are disclosed. The memory cell includes
a substrate and a select transistor. The select transistor includes a gate disposed over the …

In this work, we have modeled the impact of substrate depletion in fully-depleted silicon-on-
insulator (FDSOI) transistor and have extensively verified the model for both NMOS and …