A model based on optical phonon scattering is developed to explain peculiarities in the
current drive, transconductance, and high-speed behavior of short-gate-length GaN …

Current–voltage characteristics of a nominally undoped AlGaN/GaN two-dimensional
electron gas channel is measured at a room temperature, and electron drift velocity is …

Subpicosecond time-resolved Raman spectroscopy has been used to measure the lifetime
of the LO phonon mode in GaN for photoexcited electron-hole pair density ranging from 10 …

The room-temperature velocity-field characteristics for n-type gallium nitride and Al Ga N∕
Ga N heterostructures, grown epitaxially on sapphire, were determined experimentally. A …

In highly polar semiconductors with electron densities typically found in heterostructure field-
effect transistors (HFETs), transport cannot be described without taking hot phonons into …

With the measured parasitic source access resistance under a different forward gate–source
current for the AlGaN/GaN heterostructure FETs (HFETs) with different device sizes, the …

A theoretical model is developed for electron velocity saturation in high power GaN
transistors. It is shown that electron velocity at high electric fields is reduced due to heating …

The progress on anti‐Stokes photoluminescence and Stokes and anti‐Stokes Raman
scattering in GaN single crystals and GaN/AlN heterostructures is reviewed. Anti‐Stokes …

Non-equilibrium phonons have been discussed for almost six decades. Here, the nature of
the longitudinal optical mode, particularly in polar materials, is discussed along with its …

The lifetimes of polar optical phonons are known to affect both the electrical and thermal
performances of gallium nitride (GaN) based devices. Hence, understanding the dynamical …