Two‐dimensional tellurium nanosheets exhibiting an anomalous switchable photoresponse with thickness dependence
Abstract Two‐dimensional (2D) tellurium (Te) was recently predicted to be promising for
diverse electronic and optoelectronic applications. However, the synthesis of high‐quality …
diverse electronic and optoelectronic applications. However, the synthesis of high‐quality …
High-mobility organic semiconducting crystal for direct X-ray detection
Q Sun, X Yan, S Chen, J Yuan, J Li, Q Luo, T Jiang… - Materials Today, 2023 - Elsevier
Tissue-equivalent pure organic semiconducting crystals (OSCs) have unique advantages in
direct X-ray detectors (DXDs), especially for biological tissue fluoroscopy, but their low …
direct X-ray detectors (DXDs), especially for biological tissue fluoroscopy, but their low …
Neutron Irradiation Effects on Boron Nitride-Based Ceramics for Use in X-ray Detection
Z Chen, Y Yang, F Yao, Y Yang, Y Li, X Jia… - … Applied Materials & …, 2023 - ACS Publications
X-ray detectors based on conventional semiconductors with large atomic numbers are
suffering from the poor stability under a high dose rate of ionizing irradiation. In this work, we …
suffering from the poor stability under a high dose rate of ionizing irradiation. In this work, we …
Interface phenomena between CdTe and ZnTe: Cu back contact
Thin film technology has reached a maturity to achieve conversion efficiencies of the order of
22%. Among thin films, CdTe-based photovoltaic modules represent 80% of the total …
22%. Among thin films, CdTe-based photovoltaic modules represent 80% of the total …
Investigation on ZnTe/CdxZn1-xTe heterostructure for photodetector applications
SN Moger, MG Mahesha - Sensors and Actuators A: Physical, 2020 - Elsevier
Abstract ZnTe/Cd x Zn 1-x Te (0.2≤ x≤ 1.0) heterostructures were fabricated by thermal
evaporation method by using CdTe and ZnTe as source materials. The properties of …
evaporation method by using CdTe and ZnTe as source materials. The properties of …
Investigation of deep levels in CdZnTeSe crystal and their effect on the internal electric field of CdZnTeSe gamma-ray detector
A study of deep levels in CdZnTeSe radiation-detection materials is presented. The
approach relies on electrical methods that combine time and temperature evolution of the …
approach relies on electrical methods that combine time and temperature evolution of the …
Electric field mapping by Pockels effect and I (V) characteristic of CdTe nuclear detectors by different Pt contact deposition
In this work, we present the optimized principal methods of surface cleaning and treatment
for CdTe nuclear detectors, namely: powder lapping, polishing and chemical etching mainly …
for CdTe nuclear detectors, namely: powder lapping, polishing and chemical etching mainly …
Real-space mapping of surface-oxygen defect states in photovoltaic materials using low-voltage scanning ultrafast electron microscopy
BS Shaheen, AM El-Zohry, J Zhao, J Yin… - … applied materials & …, 2020 - ACS Publications
Ultrathin layers of native oxides on the surface of photovoltaic materials may act as very
efficient carrier trapping/recombination centers, thus significantly affecting their interfacial …
efficient carrier trapping/recombination centers, thus significantly affecting their interfacial …
XPS measurements of air-exposed Cd (Zn) 1–xFexTe1–ySey surfaces revisited
Recently introduced model for quantitative analysis of in-depth non-uniform surfaces is
applied to reexamine the X-ray Photoelectron Spectroscopy (XPS) data of Cd 0.99 Fe 0.01 …
applied to reexamine the X-ray Photoelectron Spectroscopy (XPS) data of Cd 0.99 Fe 0.01 …
II-VI Wide-Bandgap Semiconductor Device Technology: Stability and Oxidation
G Korotcenkov - Handbook of II-VI Semiconductor-Based Sensors and …, 2023 - Springer
In this chapter, we continue our discussion of topics related to the technology of II-VI wide-
bandgap semiconductors. These are stability and oxidation of II-VI semiconductor …
bandgap semiconductors. These are stability and oxidation of II-VI semiconductor …