Understanding the dynamics of the laser crystallization (LC) process of Ge thin films by
nanosecond (ns) pulsed infrared (IR) lasers is important for producing homogeneous, crack …

The fabrication of polycrystalline Ge films at relatively low temperatures is of great
importance for their applications in advanced microelectronic and solar cell devices. In this …

Crystalline Ge was directly achieved on a flexible plastic by layer exchange between Ag and
amorphous Ge layers. The key factor for the layer exchange was limiting the diffusion of Ag …

Material crystallinity is paramount in determining the photoelectric performances and device
applications. Moreover, a high-quality crystalline layer, especially a multilayer film or a …

Magnesium (Mg)-induced lateral crystallization (Mg-ILC) of amorphous germanium (Ge) on
a SiO 2 stacked structure was investigated. From Raman mapping images, the critical …

The present study explores the Copper (Cu)-induced crystallization of amorphous
germanium (Ge) films deposited on glass substrate using RF sputtering. The impact of post …

In this paper, we studied the deposition and characterization of monolithic and silver-doped
copper coatings using RF magnetron sputtering. The main objective was to examine the …

We report the realization of polycrystalline (poly)-Ge thin film on glass (insulator) at a
significantly low temperature of~ 170° C. We realized it using Au induced layer exchange …

Radio Frequency (RF) sputtered germanium (Ge) thin films were deposited on glass
substrate at in situ annealing temperatures of 400, 450, 500, 550, and 600° C. X‐ray …

The effect of Au layer thickness (1, 2.5, 5, 7.5 and 10 nm) on the low-temperature
crystallization of Ge thin films (30 nm) was examined. It is found that the best Ge crystallinity …