High‐performance vacuum‐processed metal oxide thin‐film transistors: a review of recent developments
Since 2010, vacuum‐processed oxide semiconductors have greatly improved with the
publication of more than 1,300 related papers. Although the number of researches on oxide …
publication of more than 1,300 related papers. Although the number of researches on oxide …
Atomic layer deposition of an indium gallium oxide thin film for thin-film transistor applications
Indium gallium oxide (IGO) thin films were deposited via atomic layer deposition (ALD) using
[1, 1, 1-trimethyl-N-(trimethylsilyl) silanaminato] indium (InCA-1) and trimethylgallium (TMGa) …
[1, 1, 1-trimethyl-N-(trimethylsilyl) silanaminato] indium (InCA-1) and trimethylgallium (TMGa) …
Remarkably high hole mobility metal-oxide thin-film transistors
High performance p-type thin-film transistor (p-TFT) was realized by a simple process of
reactive sputtering from a tin (Sn) target under oxygen ambient, where remarkably high field …
reactive sputtering from a tin (Sn) target under oxygen ambient, where remarkably high field …
Self-assembled nanodielectrics for solution-processed top-gate amorphous IGZO thin-film transistors
Metal oxide semiconductors, such as amorphous indium gallium zinc oxide (a-IGZO), have
made impressive strides as alternatives to amorphous silicon for electronics applications …
made impressive strides as alternatives to amorphous silicon for electronics applications …
Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at …
Amorphous metal-oxide semiconductors (AOSs) such as indium-gallium-zinc-oxide (IGZO)
as an active channel have attracted substantial interests with regard to high-performance …
as an active channel have attracted substantial interests with regard to high-performance …
Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals
High mobility channel thin-film-transistor (TFT) is crucial for both display and future
generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm …
generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm …
Remarkably high mobility thin-film transistor on flexible substrate by novel passivation material
CW Shih, A Chin - Scientific reports, 2017 - nature.com
High mobility thin-film transistor (TFT) is crucial for future high resolution and fast response
flexible display. Remarkably high performance TFT, made at room temperature on flexible …
flexible display. Remarkably high performance TFT, made at room temperature on flexible …
Study on the lateral carrier diffusion and source-drain series resistance in self-aligned top-gate coplanar InGaZnO thin-film transistors
We investigated the lateral distribution of the equilibrium carrier concentration (n 0) along
the channel and the effects of channel length (L) on the source-drain series resistance (R …
the channel and the effects of channel length (L) on the source-drain series resistance (R …
Role of in-situ hydrogen plasma treatment on gate bias stability and performance of a-IGZO thin-film transistors
This work investigates the effect of an in situ hydrogen plasma treatment on gate bias
stability and performance of amorphous InGaZnO thin-film transistors (TFTs) deposited by …
stability and performance of amorphous InGaZnO thin-film transistors (TFTs) deposited by …
Investigation of the high mobility IGZO thin films by using co-sputtering method
CM Hsu, WC Tzou, CF Yang, YJ Liou - Materials, 2015 - mdpi.com
High transmittance ratio in visible range, low resistivity, and high mobility of IGZO thin films
were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3+ 2 …
were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3+ 2 …