N-polar GaN epitaxy and high electron mobility transistors
This paper reviews the progress of N-polar ($000\mathop 1\limits^\_ $) GaN high frequency
electronics that aims at addressing the device scaling challenges faced by GaN high …
electronics that aims at addressing the device scaling challenges faced by GaN high …
Development of GaN HEMTs fabricated on silicon, silicon-on-insulator, and engineered substrates and the heterogeneous integration
LH Hsu, YY Lai, PT Tu, C Langpoklakpam, YT Chang… - Micromachines, 2021 - mdpi.com
GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from
the high-frequency power amplifier to the high voltage devices used in power electronic …
the high-frequency power amplifier to the high voltage devices used in power electronic …
Evaluation of Low-Temperature Saturation Velocity in -(AlxGa1–x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors
We report on the high-field transport characteristics and saturation velocity in a modulation-
doped β-(Al x Ga 1-x) 2 O 3/Ga 2 O 3 heterostructure. The formation of a 2-D electron gas …
doped β-(Al x Ga 1-x) 2 O 3/Ga 2 O 3 heterostructure. The formation of a 2-D electron gas …
N-polar ScAlN and HEMTs grown by molecular beam epitaxy
Molecular beam epitaxy of single-phase wurtzite N-polar Sc x Al 1− x N (x∼ 0.11–0.38) has
been demonstrated on sapphire substrates by locking its lattice-polarity to the underlying N …
been demonstrated on sapphire substrates by locking its lattice-polarity to the underlying N …
Passivation schemes for ScAlN-barrier mm-wave high electron mobility transistors
This article presents improvements of large-signal RF power performance at Ka-band of
gallium nitride high electron mobility transistors (HEMTs) utilizing a scandium aluminum …
gallium nitride high electron mobility transistors (HEMTs) utilizing a scandium aluminum …
[HTML][HTML] Record high electron mobility and low sheet resistance on scaled-channel N-polar GaN/AlN heterostructures grown on on-axis N-polar GaN substrates by …
GaN-based high electron mobility transistors (HEMTs) have demonstrated high frequency
power amplification with considerably larger output power densities than that available from …
power amplification with considerably larger output power densities than that available from …
[HTML][HTML] Evaluation of linearity at 30 GHz for N-polar GaN deep recess transistors with 10.3 W/mm of output power and 47.4% PAE
The advantage of GaN is the capability of producing amplifiers with high output power and
efficiency. At microwave frequencies, this performance has been achieved; however, when …
efficiency. At microwave frequencies, this performance has been achieved; however, when …
Determination of the self-compensation ratio of carbon in AlGaN for HEMTs
B Rackauskas, MJ Uren, S Stoffels… - … on Electron Devices, 2018 - ieeexplore.ieee.org
Epitaxial AlGaN/GaN/AlGaN-on-Si high-electron mobility structures with and without carbon
doping have been studied. By considering the donor density required to suppress a 2D hole …
doping have been studied. By considering the donor density required to suppress a 2D hole …
Giant lateral photovoltaic effect in MoS2/SiO2/Si pin junction
LZ Hao, YJ Liu, ZD Han, ZJ Xu, J Zhu - Journal of alloys and compounds, 2018 - Elsevier
Molybdenum disulfide (MoS 2) is investigated as one typical kind of two dimensional (2D)
materials for developing various kinds of electronic devices. Here, we report a giant lateral …
materials for developing various kinds of electronic devices. Here, we report a giant lateral …
High conductivity coherently strained quantum well XHEMT heterostructures on AlN substrates with delta doping
Polarization-induced two-dimensional electron gases (2DEGs) in AlN/GaN/AlN quantum
well high-electron-mobility transistors on ultrawide bandgap AlN substrates offer a promising …
well high-electron-mobility transistors on ultrawide bandgap AlN substrates offer a promising …