Silicon is vital for its high abundance, vast production, and perfect compatibility with the well-
established CMOS processing industry. Recently, artificially stacked layered 2D structures …

Abstract Two-dimensional (2D) materials are being intensively exploited for broadband-
responsive photodetectors (PDs). However, the broadband-responsive PDs based on 2D …

Broad-spectrum detection and large-scale integration are the inevitable trends in the current
evolution of infrared photodetectors. New materials were integrated with existing platforms to …

Graphene-based photodetectors have attracted much attention due to their unique
properties, such as high-speed and wide-band detection capability. However, they suffer …

Graphene/silicon Schottky junction diodes have been extensively studied and widely used
in photodetection. However, limited to the low light absorption of single-layer graphene and …

Dirac semimetals have demonstrated significant attraction in the field of optoelectronics due
to their unique bandgap structure and high carrier mobility. Combining them with classical …

Patterning is a crucial fabrication step for successfully applying two-dimensional materials in
electronic and optoelectronic devices. It can realize miniaturization and help explore new …

p-type silicon (p-Si)/macro-assembled graphene nanofilm (nMAG)/n-type silicon (n-Si)
heterojunction is utilized to fabricate near-infrared photodetector. Dual built-in electric fields …

Heterojunctions of monolayer graphene and silicon, which form shallow junctions with
enhanced photoresponse, have emerged as an attractive candidate for highly sensitive …

Graphene-silicon charge-sampling devices (CSD) can achieve remarkable sensitivity to
weak light detection, benefiting from intrinsic amplification and nondestructive signal …