Prospects of III-nitride optoelectronics grown on Si
The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications
such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and …
such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and …
Binary group III-nitride based heterostructures: band offsets and transport properties
In the last few years, there has been remarkable progress in the development of group III-
nitride based materials because of their potential application in fabricating various …
nitride based materials because of their potential application in fabricating various …
The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer
A Watanabe, T Takeuchi, K Hirosawa, H Amano… - Journal of crystal …, 1993 - Elsevier
MOVPE growth of GaN films on Si (111) substrates has been studied. A thin single crystal of
AlN is found to be an effective intermediate layer for the growth of single crystalline GaN …
AlN is found to be an effective intermediate layer for the growth of single crystalline GaN …
GaN on Si substrate with AlGaN/AlN intermediate layer
H Ishikawa, GY Zhao, N Nakada… - Japanese journal of …, 1999 - iopscience.iop.org
A single crystal GaN thin film was successfully grown on a Si (111) substrate by means of
atmospheric pressure metalorganic chemical vapor deposition. Though there is a large …
atmospheric pressure metalorganic chemical vapor deposition. Though there is a large …
Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer
T Detchprohm, K Hiramatsu, H Amano… - Applied physics …, 1992 - pubs.aip.org
In hydride vapor phase epitaxial (HVPE) growth of GaN, the sputtered ZnO layer has been
found to be one of the best buffer layers because of the fact that physical properties of ZnO …
found to be one of the best buffer layers because of the fact that physical properties of ZnO …
Growth model for GaN with comparison to structural, optical, and electrical properties
DD Koleske, AE Wickenden, RL Henry… - Journal of Applied …, 1998 - pubs.aip.org
A kinetic model is presented to explain the metal organic vapor phase epitaxy (MOVPE)
growth of GaN. The model is based upon measured desorption rates and assumptions on …
growth of GaN. The model is based upon measured desorption rates and assumptions on …
MOVPE growth of GaN on Si (1 1 1) substrates
A Dadgar, M Poschenrieder, J Bläsing… - Journal of Crystal …, 2003 - Elsevier
Metalorganic chemical vapor phase deposition of thick, crack-free GaN on Si can be
performed either by patterning of the substrate and selective growth or by low-temperature …
performed either by patterning of the substrate and selective growth or by low-temperature …
GaN heteroepitaxial growth on silicon nitride buffer layers formed on Si (111) surfaces by plasma-assisted molecular beam epitaxy
Y Nakada, I Aksenov, H Okumura - Applied physics letters, 1998 - pubs.aip.org
Wurtzite GaN films were grown on silicon nitride buffer layers formed on Si (111) substrates
by radio frequency plasma-assisted molecular beam epitaxy. Reflection high energy …
by radio frequency plasma-assisted molecular beam epitaxy. Reflection high energy …
Sixteen years GaN on Si
A Dadgar - physica status solidi (b), 2015 - Wiley Online Library
GaN, the basis of high brightness LEDs and high power, high frequency FET's has
developed to the second important semiconductor after Si. Although epitaxial growth of thin …
developed to the second important semiconductor after Si. Although epitaxial growth of thin …
Atomic arrangement at the AlN/Si (111) interface
High-quality GaN epilayers have been grown on Si 111 substrates by metalorganic vapor
phase epitaxy using a low-temperature AlN nucleation layer. The atomic arrangement at the …
phase epitaxy using a low-temperature AlN nucleation layer. The atomic arrangement at the …