Correlating internal stresses, electrical activity and defect structure on the micrometer scale in EFG silicon ribbons

G Sarau, S Christiansen, M Holla, W Seifert - Solar Energy Materials and …, 2011 - Elsevier
In the present paper, we study the influence of defects through their stress fields on the
electrical activity and residual stress states of as-grown edge-defined film-feed (EFG) …

Effect of growth rate and wafering on residual stress of diamond wire sawn silicon wafers

A Kumar, RGR Prasath, V Pogue, K Skenes… - Procedia …, 2016 - Elsevier
The mechanical integrity of photovoltaic (PV) silicon wafers is critical to avoid failure during
solar cell manufacturing. Residual stress present in wafers affects mechanical integrity …

Analysis of photoelastic properties of monocrystalline silicon

M Stoehr, G Gerlach, T Härtling… - Journal of Sensors …, 2020 - jsss.copernicus.org
Photoelasticity is considered a useful measurement tool for the non-destructive and
contactless determination of mechanical stresses or strains in the production of silicon …

Comparison of phase shifting techniques for measuring in-plane residual stress in thin, flat silicon wafers

RGR Prasath, K Skenes, S Danyluk - Journal of electronic materials, 2013 - Springer
This paper reports on a comparison of the six-and ten-step phase shifting methods in digital
transmission photoelasticity and the application of these methods to obtain the residual …

Residual stress and dislocations density in silicon ribbons grown via optical zone melting

A Augusto, D Pera, HJ Choi, P Bellanger… - Journal of Applied …, 2013 - pubs.aip.org
We investigate the relationships between growth rate, time-temperature profile, residual
stress, dislocation density, and electrical performance of silicon ribbons grown via optical …

Crystallographic orientation identification in multicrystalline silicon wafers using NIR transmission intensity

K Skenes, A Kumar, RGR Prasath… - Journal of Electronic …, 2018 - Springer
Near-infrared (NIR) polariscopy is a technique used for the non-destructive evaluation of the
in-plane stresses in photovoltaic silicon wafers. Accurate evaluation of these stresses …

[PDF][PDF] Residual stress analysis and bow simulation of crystalline silicon solar cells

CH Chen, HT Hu, FM Lin, HH Hsieh - J. Zhejiang Univ. A, 2017 - researchgate.net
The pressure to reduce solar energy costs encourages efforts to reduce the thickness of
silicon wafers. Thus, the cell bowing problem associated with the use of thin wafers has …

Photoelastic characterization on multicrystalline silicon substrates for solar cell

M Fukuzawa, M Yamada - Materials science in semiconductor processing, 2006 - Elsevier
By using a scanning infrared polariscope (SIRP), the absolute difference of refractive index|
Δn| and the principal direction ψ of strain-induced birefringence have been characterized in …

[PDF][PDF] Spatial distribution of full-field residual stress and its correlation with fracture strength of thin silicon wafers

A Kumar, K Skenes, RGR Prasath, C Yang… - Proceedings of the …, 2013 - researchgate.net
Residual stresses are a major concern in thin silicon wafers because of their potentially
detrimental effect on mechanical properties during cell processing. Residual stresses are …

矽晶太阳能电池的翘曲模拟与残留应力分析

CH Chen, HT Hu, FM Lin, HH Hsieh - Journal of Zhejiang University …, 2017 - Springer
抽象目的建立一套系统的方法来模拟矽晶太阳能电池的翘曲行为, 进而分析因翘曲而产生的残留
应力. 创新点1. 利用纳米压痕实验及电子显微镜测量材料性质及结构尺寸 …