A high-performance CMOS voltage-controlled oscillator for ultra-low-voltage operations
HH Hsieh, LH Lu - IEEE Transactions on Microwave Theory …, 2007 - ieeexplore.ieee.org
In this paper, a novel circuit topology of voltage-controlled oscillators (VCOs) suitable for
ultra-low-voltage operations is presented. By utilizing the capacitive feedback and the …
ultra-low-voltage operations is presented. By utilizing the capacitive feedback and the …
A 0.4-V low noise amplifier using forward body bias technology for 5 GHz application
D Wu, R Huang, W Wong… - IEEE Microwave and …, 2007 - ieeexplore.ieee.org
A fully integrated low noise amplifier (LNA) suitable for ultra low voltage and ultra low power
applications is proposed and demonstrated in 0.13 μ m CMOS technology. In order to meet …
applications is proposed and demonstrated in 0.13 μ m CMOS technology. In order to meet …
A fully integrated 5 GHz low-voltage LNA using forward body bias technology
CP Chang, JH Chen, YH Wang - IEEE Microwave and Wireless …, 2009 - ieeexplore.ieee.org
A fully integrated 5 GHz low-voltage and low-power low noise amplifier (LNA) using forward
body bias technology, implemented through a 0.18 mum RF CMOS technology, is …
body bias technology, implemented through a 0.18 mum RF CMOS technology, is …
Design of the input matching network of RF CMOS LNAs for low-power operation
Optimum design of input matching network of CMOS low-noise amplifiers (LNAs) for low-
power applications is discussed in this paper. This is done through an investigation of the …
power applications is discussed in this paper. This is done through an investigation of the …
A modified architecture used for input matching in CMOS low-noise amplifiers
M Shouxian, M Jian-Guo, YK Seng - IEEE Transactions on …, 2005 - ieeexplore.ieee.org
An architecture used for input matching in CMOS low-noise amplifiers (LNAs) is investigated
in this paper. In the proposed architecture, gate and source inductors, which are essential in …
in this paper. In the proposed architecture, gate and source inductors, which are essential in …
A 0.6-V 1.6-mW transformer-based 2.5-GHz downconversion mixer with+ 5.4-dB gain and-2.8-dBm IIP3 in 0.13-/spl mu/m CMOS
C Hermann, M Tiebout, H Klar - IEEE Transactions on …, 2005 - ieeexplore.ieee.org
On-chip transformers are best suited to lower the supply voltage in RF integrated circuits. A
design method to achieve a high current gain with an on-chip transformer operating in …
design method to achieve a high current gain with an on-chip transformer operating in …
Distortion in RF CMOS short-channel low-noise amplifiers
RA Baki, TKK Tsang… - IEEE transactions on …, 2006 - ieeexplore.ieee.org
An approach to estimate the distortion in CMOS short-channel (eg 0.18-/spl mu/m gate
length) RF low-noise amplifiers (LNAs), based on Volterra's series, is presented. Compact …
length) RF low-noise amplifiers (LNAs), based on Volterra's series, is presented. Compact …
A 5.25-GHz CMOS folded-cascode even-harmonic mixer for low-voltage applications
MF Huang, CJ Kuo, SY Lee - IEEE transactions on microwave …, 2006 - ieeexplore.ieee.org
This paper presents a 5.25-GHz folded-cascode even-harmonic mixer (FEHM) for low-
voltage applications. This FEHM employs the folded technique to reduce the headroom …
voltage applications. This FEHM employs the folded technique to reduce the headroom …
0.5-V 5.6-GHz CMOS receiver subsystem
The building blocks of a 0.5-V receiver, including a receiver front-end and a low-pass filter
(LPF), are fabricated using 0.18-mum CMOS technology. At 5.6 GHz, the receiver front-end …
(LPF), are fabricated using 0.18-mum CMOS technology. At 5.6 GHz, the receiver front-end …
A CMOS 5-GHz micro-power lna
HH Hsieh, LH Lu - 2005 IEEE Radio Frequency integrated …, 2005 - ieeexplore.ieee.org
A fully integrated LNA suitable for ultra-low-voltage and ultra-low-power applications is
designed and fabricated in a standard 0.18-/spl mu/m CMOS technology. With …
designed and fabricated in a standard 0.18-/spl mu/m CMOS technology. With …