Instabilities in semiconductor heterostructure growth can be exploited for the self-organized
formation of nanostructures, allowing for carrier confinement in all three spatial dimensions …

In semiconductor heteroepitaxy the growing film frequently undergoes a series of strain relief
mechanisms that may include surface reconstruction, step bunching, faceting, and finally …

Thin films are often grown away from thermodynamic equilibrium and their morphology
becomes determined by kinetics. The final structure of the epitaxial film is decided in the very …

In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …

Many recent advances in microelectronics would not have been possible without the
development of strain induced nanodevices and bandgap engineering, in particular …

The general trend in modern solid state physics and technology is to make things smaller.
The size of key elements in modern devices approaches the nanometer scale, for both …

An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

In recent years, quantum dots have been successfully grown by self-assembling processes.
For optoelectronic device applications, the quantum-dot structures have advantages such as …

Strain fields in stacked layers of vertically aligned self-assembled Ge islands on Si (100) can
cause a reduction of the wetting layer thickness in all but the initial layer and hence induce …

The interaction between dental pulp derived mesenchymal stem cells (DP-MSCs) and three
different tantalum nanotopographies with and without a fibronectin coating is examined …