Physical insights into the nature of gate-induced drain leakage in ultrashort channel nanowire FETs
In this paper, we demonstrate that the lateral band-to-band tunneling component of gate-
induced drain leakage (GIDL) leads to the formation of a parasitic bipolar junction transistor …
induced drain leakage (GIDL) leads to the formation of a parasitic bipolar junction transistor …
Improvement of electrical performance in junctionless nanowire TFET using hetero-gate-dielectric
M Rahimian, M Fathipour - Materials Science in Semiconductor Processing, 2017 - Elsevier
Tunneling field-effect transistors (TFETs) are gaining attention because of their good
scalability and low leakage current. However, they suffer from low on-state current and …
scalability and low leakage current. However, they suffer from low on-state current and …
Asymmetric junctionless nanowire TFET with built-in source pocket emphasizing on energy band modification
M Rahimian, M Fathipour - Journal of Computational Electronics, 2016 - Springer
We present a detailed study on a technique to realize a narrow and highly doped built-in n^+
n+ source pocket in an asymmetric junctionless nanowire tunnel field-effect transistor (AJN …
n+ source pocket in an asymmetric junctionless nanowire tunnel field-effect transistor (AJN …
Variation of threshold voltage with temperature in impact ionization-induced steep switching Si and Ge junctionless MOSFETs
M Gupta, A Kranti - IEEE Transactions on Electron Devices, 2017 - ieeexplore.ieee.org
In this paper, we report on the anomalous behavior of threshold voltage (Vth) with
temperature in junctionless (JL) transistors. It is shown that both positive and negative …
temperature in junctionless (JL) transistors. It is shown that both positive and negative …
Split-Gate Induced High-Field for Impact Ionization Triggered Bipolar Action and Sub-kT/q Switching in Junctionless FET
In this article, an energy-efficient, ultra-steep subthreshold slope device based on the split-
gate junctionless field-effect transistor (JLFET) has been proposed and investigated …
gate junctionless field-effect transistor (JLFET) has been proposed and investigated …
Investigation of HCI Effect and BTBT Supported High Ion/Ioff in Split Double-Gate Junctionless FETs
S Kumar, KM Devi, A Kumar - 2024 Joint International …, 2024 - ieeexplore.ieee.org
In this work, a n-type Split-Double-Gate Junctionless Field Effect Transistor (SDG-JLFET)
has been investigated with the Sentaurus technology computer-aided design (TCAD) tool …
has been investigated with the Sentaurus technology computer-aided design (TCAD) tool …
Electrical characteristics of tunneling field-effect transistors with asymmetric channel thickness
J Kim, H Oh, J Kim, M Meyyappan… - Japanese Journal of …, 2017 - iopscience.iop.org
Abstract Effects of using asymmetric channel thickness in tunneling field-effect transistors
(TFET) are investigated in sub-50 nm channel regime using two-dimensional (2D) …
(TFET) are investigated in sub-50 nm channel regime using two-dimensional (2D) …
A 1T-DRAM cell based on a tunnel field-effect transistor with highly-scalable pillar and surrounding gate structure
In this work, a 1-transistor (1T) dynamic random access memory (DRAM) cell based on a
tunnel field-effect transistor (TFET) is introduced and its operation physics demonstrated. It is …
tunnel field-effect transistor (TFET) is introduced and its operation physics demonstrated. It is …