In the present hyper-scaling era, memory technology is advancing owing to the demand for
high-performance computing and storage devices. As a result, continuous work on …

We present herewith a novel approach of equally thick AFE/FE (ZrO2/HZO) bilayer stack
heterostructure films for achieving an equivalent oxide thickness (EOT) of 4.1 Å with a …

Atomic layer engineering is investigated to tailor the morphotropic phase boundary (MPB)
between antiferroelectric, ferroelectric, and paraelectric phases. By increasing the HfO2 …

The endurance degradation of HfO 2-based ferroelectric films limits their development
toward practical applications. In this work, we systematically investigate the ferroelectric …

The ferroelectric properties of fluorite-structured oxides have attracted significant attention
from researchers because of their potential applications in nonvolatile memory devices …

Energy-efficient memory elements having a non-volatile memory window (MW) with a non-
destructive read operation are highly desirable for both random access memory and …

Flexible hafnia-based ferroelectric memories are arousing much interest with the ever-
growing demands for nonvolatile data storage in wearable electronic devices. Here, high …

The development of artificial tactile receptor systems is important in the fields of prosthetic
devices, interfaces for the metaverse, and sensors. A pressure sensor and memory device …

In this paper, we report for the first time the effect of high-pressure microwave annealing
(HPMWA) on the electrical properties of hafnium zirconium oxide capacitors. The high …

Further scaling of dynamic random-access memory (DRAM) faces critical challenges
because of the lack of materials with both high dielectric constant and low leakage. In this …