Stationary properties of high-critical-temperature proximity effect Josephson junctions

KA Delin, AW Kleinsasser - Superconductor Science and …, 1996 - iopscience.iop.org
The discovery of superconductors with high critical temperatures has led to a considerable
effort to fabricate Josephson junctions operating at temperatures approaching, or even …

Weak links in high critical temperature superconductors

F Tafuri, JR Kirtley - Reports on Progress in Physics, 2005 - iopscience.iop.org
The traditional distinction between tunnel and highly transmissive barriers does not currently
hold for high critical temperature superconducting Josephson junctions, both because of …

Possible non-Fermi-liquid behavior of

L Klein, L Antognazza, TH Geballe, MR Beasley… - Physical Review B, 1999 - APS
We measured the resistivity (ρ) and magnetoresistance (Δ ρ/ρ) of the metallic pseudocubic
perovskite CaRuO 3. At high temperatures, ρ= a+ b T 0.5 and Δ ρ/ρ is negative. At low …

Conductive exotic-nitride barrier layer for high-dielectric-constant materials

SR Summerfelt - US Patent 5,504,041, 1996 - Google Patents
A preferred embodiment of this invention comprises an oxidizable layer (eg TiN 50), a
conductive exotic-nitride barrier layer (eg Ti-AN 34) overlying the oxidizable layer, an …

Study of interface resistances in epitaxial YBa2Cu3O7−x/barrier/YBa2Cu3O7−x junctions

K Char, L Antognazza, TH Geballe - Applied physics letters, 1993 - pubs.aip.org
We have measured interface resistances in YBa2Cu3O7− x/barrier/YBa2Cu3O7− x
junctions with different barrier materials in an edge junction geometry. CaRuO3, La0. 5Sr0 …

Josephson coupling of YBa2Cu3O7− x through a ferromagnetic barrier SrRuO3

L Antognazza, K Char, TH Geballe, LLH King… - Applied physics …, 1993 - pubs.aip.org
Epitaxial barriers of ferromagnetic SrRuOs have been used to fabricate high T,
superconductor-normal-superconductor Josephson junctions in the edge junction geometry …

High-dielectric-constant material electrodes comprising thin platinum layers

SR Summerfelt, HR Beratan, PS Kirlin… - US Patent …, 1996 - Google Patents
(57) ABSTRACT A preferred embodiment of this invention comprises a thin unreactive film
(eg platinum 36) contacting a high-dielec (56) References Cited tric-constant material (eg …

Method of forming high-dielectric-constant material electrodes comprising sidewall spacers

Y Nishioka, SR Summerfelt, K Park… - US Patent …, 1996 - Google Patents
Generally, the present invention utilizes a lower electrode comprising a sidewall spacer to
form a top surface with rounded corners on which HDC material can be deposited without …

Strain stabilized metal–insulator transition in epitaxial thin films of metallic oxide

RA Rao, Q Gan, CB Eom, RJ Cava, Y Suzuki… - Applied physics …, 1997 - pubs.aip.org
We report the observation of both metallic and semiconducting behavior in epitaxial thin
films of the metallic oxide CaRuO 3 deposited under identical conditions. X-ray diffraction …

Electronic structure of ARuO3 (A= Ca, Sr and Ba) compounds

MVR Rao, VG Sathe, D Sornadurai, B Panigrahi… - Journal of Physics and …, 2001 - Elsevier
X-ray Photoelectron Spectroscopy (XPS) and Ultraviolet Photoelectron Spectroscopy (UPS)
techniques along with the Tight Binding Linear Muffin Tin Orbitals within Atomic Sphere …