Structure of bismuth telluride nanowire arrays fabricated by electrodeposition into porous anodic alumina templates
Arrays of bismuth telluride (Bi2Te3) nanowires with diameters of∼ 25,∼ 50, and∼ 75 nm
have been produced by electrochemical deposition into porous anodic alumina templates …
have been produced by electrochemical deposition into porous anodic alumina templates …
Weak antilocalization and electron-electron interaction effects in Cu-doped BiSe films
Y Takagaki, B Jenichen, U Jahn, M Ramsteiner… - Physical Review B …, 2012 - APS
We investigate the low-temperature transport properties in Cu x Bi 2− x Se 3 films prepared
by a hot-wall-epitaxy growth of Bi 2 Se 3 layers on Cu-deposited substrates. We observe a …
by a hot-wall-epitaxy growth of Bi 2 Se 3 layers on Cu-deposited substrates. We observe a …
Thermoelectric properties of n-type Bi2Te2. 7Se0. 3 and p-type Bi0. 5Sb1. 5Te3 thin films deposited by direct current magnetron sputtering
D Bourgault, CG Garampon, N Caillault, L Carbone… - Thin Solid Films, 2008 - Elsevier
n-type and p-type thermoelectric thin films have been deposited by direct current magnetron
sputtering from n-type Bi2Te2. 7Se0. 3 and p-type Bi0. 5Sb1. 5Te3 targets on glass and …
sputtering from n-type Bi2Te2. 7Se0. 3 and p-type Bi0. 5Sb1. 5Te3 targets on glass and …
Transport properties of V–VI semiconducting thermoelectric BiSbTe alloy thin films and their application to micromodule Peltier devices
Thin semiconducting thermoelectric films with narrow energy band gaps are considered to
be very promising for future microdevice applications (sensors and generators). The …
be very promising for future microdevice applications (sensors and generators). The …
Anisotropic Topological Surface States on High‐Index Bi2Se3 Films
Topological insulators (TIs) and their properties are among the most intensively studied
subjects in condensed matter physics today.[1–3] The compound Bi 2Se 3, a traditional …
subjects in condensed matter physics today.[1–3] The compound Bi 2Se 3, a traditional …
Growth and structure of thermally evaporated Bi2Te3 thin films
EI Rogacheva, AV Budnik, MV Dobrotvorskaya… - Thin Solid Films, 2016 - Elsevier
The growth mechanism, microstructure, and crystal structure of the polycrystalline n-Bi 2 Te
3 thin films with thicknesses d= 15–350 nm, prepared by thermal evaporation in vacuum …
3 thin films with thicknesses d= 15–350 nm, prepared by thermal evaporation in vacuum …
Mechanisms of spiral growth in Bi2Te3 thin films grown by the hot-wall-epitaxy technique
The hot-wall-epitaxy (HWE) technique was used to deposit Bi2Te3 thin films on amorphous
(kapton and SiO2) substrates. It was found that the growth proceeds under low …
(kapton and SiO2) substrates. It was found that the growth proceeds under low …
Magnetic order in 3D topological insulators—Wishful thinking or gateway to emergent quantum effects?
Three-dimensional topological insulators (TIs) are a perfectly tuned quantum-mechanical
machinery in which counterpropagating and oppositely spin-polarized conduction channels …
machinery in which counterpropagating and oppositely spin-polarized conduction channels …
Molecular-beam epitaxy of topological insulator Bi2Se3 (111) and (221) thin films
MH Xie, X Guo, ZJ Xu, WK Ho - Chinese Physics B, 2013 - iopscience.iop.org
This paper presents an overview of the growth of Bi 2 Se 3, a prototypical three-dimensional
topological insulator, by molecular-beam epitaxy on various substrates. Comparison is …
topological insulator, by molecular-beam epitaxy on various substrates. Comparison is …
Weak antilocalization and universal conductance fluctuations in bismuth telluro-sulfide topological insulators
We report on van der Waals epitaxial growth, materials characterization, and
magnetotransport experiments in crystalline nanosheets of Bismuth Telluro-Sulfide (BTS) …
magnetotransport experiments in crystalline nanosheets of Bismuth Telluro-Sulfide (BTS) …