Active cycling reliability of power devices: Expectations and limitations

W Kanert - Microelectronics Reliability, 2012 - Elsevier
Active cycling of power devices, ie exposure to repetitive voltage and current pulses, causes
power dissipation, resulting in thermo-mechanical loads that can cause different failure …

Crystal-plasticity based thermo-mechanical modeling of Al-components in integrated circuits

F Meier, C Schwarz, E Werner - Computational materials science, 2014 - Elsevier
Growing demands on performance and durability of integrated circuits (ICs) require an
understanding of possible failure mechanisms. One main cause for damage of ICs arises …

Modular Test System Architecture for Device, Circuit, and System Level Reliability Testing and Condition Monitoring

R Sleik, M Glavanovics, S Einspieler… - IEEE Transactions …, 2017 - ieeexplore.ieee.org
Reliability stress testing of power semiconductors requires significant development effort for
a test apparatus to provide the required functionality. This paper presents a modular test …

Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24 V battery system applications

G Rostaing, M Berkani, D Mechouche… - Microelectronics …, 2013 - Elsevier
This study aims to assess the reliability of smart converters for applications using 24 V
batteries. It compares degradation effects and lifetime durations for similar dissipated …

[PDF][PDF] Numerical simulations of fatigue crack problems in semiconductor devices subjected to thermomechanical loading

G Kravchenko - 2014 - scholar.archive.org
Modern power semiconductor devices used in automotive products and industrial systems
have to reliably withstand up to 109 and more high power density electrical pulses. The heat …

Executable test definition for a state machine driven embedded test controller module

B Steinwender, M Glavanovics… - 2015 IEEE 13th …, 2015 - ieeexplore.ieee.org
Microcontroller modules are introduced to a life test system to apply stimuli and stress
patterns to the unit under test. The firmware must evaluate the status or operational function …

Distributed power semiconductor stress test & measurement architecture

B Steinwender, S Einspieler… - 2013 11th IEEE …, 2013 - ieeexplore.ieee.org
Conventional reliability testing of microelectronic power devices requires dedicated test
systems. In order to test a statistically meaningful set of devices, only simplified stress pattern …

3-D electrothermal simulation of active cycling on smart power MOSFETs during short-circuit and UIS conditions

M Riccio, V d'Alessandro, A Irace, G Rostaing… - Microelectronics …, 2014 - Elsevier
Active cycling of power devices operated in harsh conditions causes high power dissipation,
resulting in critical electrothermal and thermo-mechanical effects that may lead to …

Validated electro-thermal simulations of two different power mosfet technologies and implications on their robustness

S de Filippis, R Illing, M Nelhiebel… - … Devices & IC's …, 2013 - ieeexplore.ieee.org
Power MOSFETs integrated in modern Smart Power switches feature a substantial high
current capability due to the very low value of their transconductance coefficient K. In this …

Temperaturabhängige mechanische Eigenschaften miniaturisierter Kupferstrukturen aus der Leistungshalbleiterelektronik

M Smolka - 2011 - pure.unileoben.ac.at
Electronic power devices have to withstand high mechanical stresses which generate during
the operation of high electric powers due to local heating and thermal expansion. The …