Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage,
higher thermal conductivity, higher operating frequency, higher operating temperature, and …

In the last two decades we have assisted to a rush towards finding a 3 He-replacing
technology capable of detecting neutrons emitted from fissile isotopes. The demand stems …

Abstract 3D printing was used to fabricate porous polycarbonate-urethane (PCU) and ultra-
high-molecular-weight polyethylene (UHMWPE) blend for the artificial meniscus to enable …

SiC, as a representative of the third generation semiconductors, is widely investigated in
power devices and sensors. However, ohmic contacts, an important component for signal …

Silicene, together with copper or nickel, is the main component of electrodes for solar cells,
lithium-ion batteries (LIB) and new-generation supercapacitors. The aim of this work was to …

This paper presents the first study on characterization of high sensitivity 4H-SiC/Si
heterojunction photodetector prepared by deposition of SiC nanoparticles NPs on silicon …

To understand the relationship between the work function and structural properties of
sufficiently expanded triangular defects (size:∼ 250 μm) in the 4H-SiC epitaxial layer, Kelvin …

Nanowires have been utilized widely in the generation of high-performance nanosensors.
Laser ablation, chemical vapor, thermal evaporation and alternating current …

The paper investigated the deposition sequence-dependent behavior of Ni (50 nm)/Ti (60
nm)/W (60 nm) and Ni (50 nm)/W (60 nm)/Ti (60 nm) Ohmic contacts on n-type 4H-SiC after …

For the first time, we report on the performances of 4H-SiC pin-diode temperature sensors
for operating temperatures between 20.5 and 802 K. In this huge temperature range, three …