Ferroelectric freestanding hafnia membranes with metastable rhombohedral structure down to 1-nm-thick
Two-dimensional freestanding membranes of materials, which can be transferred onto and
make interfaces with any material, have attracted attention in the search for functional …
make interfaces with any material, have attracted attention in the search for functional …
Stabilizing the Ferroelectric Phase of Thin Films by Charge Transfer
Ferroelectric hafnia-based thin films have attracted significant interest due to their
compatibility with complementary metal-oxide-semiconductor technology (CMOS) …
compatibility with complementary metal-oxide-semiconductor technology (CMOS) …
Epitaxial Orientation-Controlled High Crystallinity and Ferroelectric Properties in Hf0.5Zr0.5O2 Films
K Liu, F Jin, L Zhou, K Liu, J Fang, J Lu… - … Applied Materials & …, 2024 - ACS Publications
Hafnium-based binary oxides are essential for fabricating nanoscale high-density
ferroelectric memory devices. However, effective strategies to control and improve their thin …
ferroelectric memory devices. However, effective strategies to control and improve their thin …
Optimizing the Ferroelectric Performance of Hf0.5Zr0.5O2 Epitaxial Film by La0.67Sr0.33MnO3 Capping Layer
Hafnium‐oxide‐based ferroelectrics have garnered considerable research interest, primarily
for their robust ferroelectricity at the nanoscale and their high compatibility with …
for their robust ferroelectricity at the nanoscale and their high compatibility with …