Electronic metadevices for terahertz applications
M Samizadeh Nikoo, E Matioli - Nature, 2023 - nature.com
The evolution of electronics has largely relied on downscaling to meet the continuous needs
for faster and highly integrated devices. As the channel length is reduced, however, classic …
for faster and highly integrated devices. As the channel length is reduced, however, classic …
Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future …
In this study, the influence of AlN barrier thickness (tb) on the RF & DC performances of 50
nm recessed T-gate Fe-doped AlN/GaN/SiC HEMT is investigated. The proposed HEMT …
nm recessed T-gate Fe-doped AlN/GaN/SiC HEMT is investigated. The proposed HEMT …
Low trapping effects and high electron confinement in short AlN/GaN-On-SiC HEMTs by means of a thin AlGaN back barrier
K Harrouche, S Venkatachalam, L Ben-Hammou… - Micromachines, 2023 - mdpi.com
In this paper, we report on an enhancement of mm-wave power performances with a
vertically scaled AlN/GaN heterostructure. An AlGaN back barrier is introduced underneath a …
vertically scaled AlN/GaN heterostructure. An AlGaN back barrier is introduced underneath a …
Trapping dynamics in GaN HEMTs for millimeter-wave applications: Measurement-based characterization and technology comparison
Charge trapping effects represent a major challenge in the performance evaluation and the
measurement-based compact modeling of modern short-gate-length (ie,≤ 0.15 μm) Gallium …
measurement-based compact modeling of modern short-gate-length (ie,≤ 0.15 μm) Gallium …
Design and simulation of T‐gate AlN/β‐Ga2O3 HEMT for DC, RF and high‐power nanoelectronics switching applications
In this paper, we report DC and RF analysis of a T‐gate AlN/β‐Ga2O3 high electron mobility
transistors (HEMTs) by optimizing the gate‐drain distance (L GD) and two T‐gate …
transistors (HEMTs) by optimizing the gate‐drain distance (L GD) and two T‐gate …
TCAD modeling of GaN HEMT output admittance dispersion through trap rate equation Green's functions
We present a novel and numerically efficient approach to analyse the sensitivity of AC
parameters to variations of traps in GaN HEMTs. The approach exploits an in-house TCAD …
parameters to variations of traps in GaN HEMTs. The approach exploits an in-house TCAD …
[HTML][HTML] Suppression of Short-Channel Effects in AlGaN/GaN HEMTs Using SiNx Stress-Engineered Technique
In this work, we present the novel application of SiNx stress-engineering techniques for the
suppression of short-channel effects in AlGaN/GaN high-electron-mobility transistors …
suppression of short-channel effects in AlGaN/GaN high-electron-mobility transistors …
A Reconfigurable Setup for the On-Wafer Characterization of the Dynamic RON of 600 V GaN Switches at Variable Operating Regimes
Charge-trapping mechanisms observed in high-voltage GaN switches are responsible for
the degradation of power converter efficiency due to modulation of the effective dynamic ON …
the degradation of power converter efficiency due to modulation of the effective dynamic ON …
Development of a Space-Grade -Band MMIC Power Amplifier in GaN/Si Technology for SAR Applications
This article presents the complete characterization of a-band monolithic (MMIC) high-power
amplifier (HPA) developed with a commercial 100-nm gallium nitride (GaN)/Si process …
amplifier (HPA) developed with a commercial 100-nm gallium nitride (GaN)/Si process …
Rf gan-hemt technology evaluation framework based on drain current transient measurements
A comprehensive framework is proposed for the extraction of RF GaN HEMT trap-related
parameters (gate/drain lag, thermal resistance, trap activation energy, cross-section, and …
parameters (gate/drain lag, thermal resistance, trap activation energy, cross-section, and …