The unprecedented increase in internet traffic witnessed in the last few years has pushed
the community to explore heterogeneous optical networks, including free-space-optics …

To fully exploit the potential advantages of ideal quantum dots (QDs)(ie full 3D carrier
confinement), elimination of the wetting layer and a uniform monomodal QD size distribution …

Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire-
/dot-like active regions were developed on InP substrates dedicated to cover the extended …

In this monograph, the authors address the physics and engineering together with the latest
achievements of efficient and compact ultrafast lasers based on novel quantum-dot …

InAs quantum-dash structures fabricated by self-assembly growth techniques and based on
compound semiconductors lattice matched to InP substrates were used to realize long …

The formation process of InAs quantum dashes and quantum dots (QDs) grown on
quaternary InAlGaAs surfaces lattice-matched to n-type InP (100) are investigated. A clear …

Self-assembled InAs quantum dots (QDs) were grown by solid source molecular beam
epitaxy. The impact of the growth parameters like the growth temperature of the InGaAlAs …

Contrary to simplified theoretical models, atomistic calculations presented here reveal that
sufficiently large in-plane shape elongation of quantum dots can not only decrease, but even …

InAs quantum dashes (Qdash) engineered to emit near 2 μm are envisioned to be promising
quantum emitters for next-generation technologies in sensing and communications. In this …

We present the static and dynamic properties of InAs quantum-dot (QD) lasers emitting near
1.55 μm. The used laser material comprises four QD layers and exhibits a high modal gain …