Low subthreshold swing and high performance of ultrathin PEALD InGaZnO thin-film transistors
SG Jeong, HJ Jeong, JS Park - IEEE Transactions on Electron …, 2021 - ieeexplore.ieee.org
Amorphous indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) were fabricated by
plasma-enhanced atomic layer deposition (PEALD). The thicknesses of the IGZO thin films …
plasma-enhanced atomic layer deposition (PEALD). The thicknesses of the IGZO thin films …
A highly parallel and energy efficient three-dimensional multilayer CMOS-RRAM accelerator for tensorized neural network
It is a grand challenge to develop highly parallel yet energy-efficient machine learning
hardware accelerator. This paper introduces a three-dimensional (3-D) multilayer …
hardware accelerator. This paper introduces a three-dimensional (3-D) multilayer …
CoMIC: Complementary Memristor based in-memory computing in 3D architecture
The use of memristors, also known as Resistive Random Access Memory (ReRAM), has
been widely investigated in recent years for non-volatile memory design applications …
been widely investigated in recent years for non-volatile memory design applications …
[图书][B] Memristor device modeling and circuit design for read out integrated circuits, memory architectures, and neuromorphic systems
C Yakopcic - 2014 - search.proquest.com
Significant interest has been placed on developing systems based on the memristor, which
was physically recognized in 2008. The memristor is a nanoscale non-volatile device with a …
was physically recognized in 2008. The memristor is a nanoscale non-volatile device with a …
Nonvolatile CBRAM-crossbar-based 3-D-integrated hybrid memory for data retention
This paper explores the design of 3-D-integrated hybrid memory by conductive-bridge
random-access-memory (CBRAM). Considering internal states, height, and radius of the …
random-access-memory (CBRAM). Considering internal states, height, and radius of the …
Energy-storing hybrid 3d vertical memory structure
A novel 3D vertical structure that can store both information and energy is proposed in this
letter. For the fabrication of 3D structural devices, an isolation layer (IL) is essential because …
letter. For the fabrication of 3D structural devices, an isolation layer (IL) is essential because …
PCM and Memristor based nanocrossbars
This paper presents performance comparison between two emerging resistive Non-Volatile
Memory (NVM) technologies; namely Memristors and Phase Change Memory (PCM); using …
Memory (NVM) technologies; namely Memristors and Phase Change Memory (PCM); using …
A 3D multi-layer CMOS-RRAM accelerator for neural network
Incremental machine learning is required for future real-time data analytics. This paper
introduces a 3D multilayer CMOS-RRAM accelerator for an incremental least-squares based …
introduces a 3D multilayer CMOS-RRAM accelerator for an incremental least-squares based …
[图书][B] Performance Evaluation and Improvement of Ferroelectric Field-Effect Transistor Memory
HS Yu - 2015 - search.proquest.com
Flash memory is reaching scaling limitations rapidly due to reduction of charge in floating
gates, charge leakage and capacitive coupling between cells which cause threshold voltage …
gates, charge leakage and capacitive coupling between cells which cause threshold voltage …