Atom probe tomography 2012
TF Kelly, DJ Larson - Annual review of materials research, 2012 - annualreviews.org
In the world of tomographic imaging, atom probe tomography (APT) occupies the high-
spatial-resolution end of the spectrum. It is highly complementary to electron tomography …
spatial-resolution end of the spectrum. It is highly complementary to electron tomography …
Green gap in GaN-based light-emitting diodes: in perspective
Significant progress has been made in the advancement of light-emitting devices in both the
blue and the red parts of the emission spectrum. However, the quantum efficiency of green …
blue and the red parts of the emission spectrum. However, the quantum efficiency of green …
Efficiency Drop in Green Light Emitting Diodes: The Role of Random Alloy Fluctuations
White light emitting diodes (LEDs) based on III-nitride InGaN/GaN quantum wells currently
offer the highest overall efficiency for solid state lighting applications. Although current …
offer the highest overall efficiency for solid state lighting applications. Although current …
Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells
We present an atomistic description of the electronic and optical properties of In 0.25 Ga
0.75 N/GaN quantum wells. Our analysis accounts for fluctuations of well width, local alloy …
0.75 N/GaN quantum wells. Our analysis accounts for fluctuations of well width, local alloy …
Carrier localization mechanisms in InGaN/GaN quantum wells
Localization lengths of the electrons and holes in InGaN/GaN quantum wells have been
calculated using numerical solutions of the effective mass Schrödinger equation. We have …
calculated using numerical solutions of the effective mass Schrödinger equation. We have …
The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures
There is a great deal of interest in the underlying causes of efficiency droop in InGaN/GaN
quantum well light emitting diodes, with several physical mechanisms being put forward to …
quantum well light emitting diodes, with several physical mechanisms being put forward to …
Increasing the reliability of solid state lighting systems via self-healing approaches: A review
U Lafont, H Van Zeijl, S Van Der Zwaag - Microelectronics Reliability, 2012 - Elsevier
Reliability issues in solid state lighting (SSL) devices based on light emitting diodes (LED) is
of major concern as it is a limiting factor to promote these optoelectronic devices for general …
of major concern as it is a limiting factor to promote these optoelectronic devices for general …
Polar (,)/ Quantum Wells: Revisiting the Impact of Carrier Localization on the “Green Gap” Problem
We present a detailed theoretical analysis of the electronic and optical properties of c-plane
In Ga N/Ga N quantum-well structures with In contents ranging from 5% to 25%. Special …
In Ga N/Ga N quantum-well structures with In contents ranging from 5% to 25%. Special …
[HTML][HTML] Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical …
We examine the effect of carrier localization due to random alloy fluctuations on the radiative
and Auger recombination rates in InGaN quantum wells as a function of alloy composition …
and Auger recombination rates in InGaN quantum wells as a function of alloy composition …
[HTML][HTML] The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells
In this paper, we compare and contrast the experimental data and the theoretical predictions
of the low temperature optical properties of polar and nonpolar InGaN/GaN quantum well …
of the low temperature optical properties of polar and nonpolar InGaN/GaN quantum well …