Quantifying the benefits of monolithic 3D computing systems enabled by TFT and RRAM
Current data-centric workloads, such as deep learning, expose the memory-access
inefficiencies of current computing systems. Monolithic 3D integration can overcome this …
inefficiencies of current computing systems. Monolithic 3D integration can overcome this …
Total Ionizing Dose Effects on 22 nm UTBB FD-SOI MOSFETs up to 100 Mrad (Si)
R Zhang, J Cui, Y Li, Q Guo… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
The electrical behavior of 22-nm ultrathin body and buried oxide fully depleted silicon on
insulator (UTBB FD-SOI) MOSFETs has been investigated up to a total ionizing dose (TID) …
insulator (UTBB FD-SOI) MOSFETs has been investigated up to a total ionizing dose (TID) …
Modelling, exploration and optimization of hardware accelerators for deep learning applications
A Dutt - 2023 - dr.ntu.edu.sg
Current applications that require processing of large amounts of data, such as in healthcare,
transportation, media, banking, telecom, internet-of-things, and security demand for new …
transportation, media, banking, telecom, internet-of-things, and security demand for new …
Проблемы TCAD-моделирования FinFET-структур с учетом радиационных эффектов
КО Петросянц, ДС Силкин, ДА Попов - Наноиндустрия, 2021 - elibrary.ru
Рассмотрены особенности разработки в среде TCAD приборно-технологических
моделей нанометровых FinFET-структур с учетом радиационных эффектов. Изложены …
моделей нанометровых FinFET-структур с учетом радиационных эффектов. Изложены …
The Effects of Total-Ionizing-Dose on Charge-Trap Transistors and Implications for Charge-Trap Memories
RM Brewer - 2021 - ir.vanderbilt.edu
Charge-trap transistors (CTTs) are commercial CMOS process transistors that employ their
high-k-metal-gate dielectric layers to store charge in the gate oxide for use as embedded …
high-k-metal-gate dielectric layers to store charge in the gate oxide for use as embedded …