Influence of Proton Ion Irradiation on the Linear–Nonlinear Optoelectronic Properties of Sb40Se20S40 Thin Films at Different Fluences for Photonic Devices

P Priyadarshini, D Alagarasan… - ACS Applied Optical …, 2022 - ACS Publications
This study investigates the effects of 30 keV proton ion irradiation on the structural,
morphological, and linear–nonlinear optoelectronic properties of Sb40Se20S40 thin films …

Tuning the nonlinear susceptibility and linear parameters upon annealing Ag 60− x Se 40 Te x nanostructured films for nonlinear and photonic applications

S Das, D Alagarasan, S Varadharajaperumal… - Materials …, 2022 - pubs.rsc.org
The current study focuses on the annealing-induced changes in the structural, non-
linear/linear optical, and surface morphological characteristics of nanostructured Ag60 …

High‐throughput method to deposit continuous composition spread Sb2(SexS1 − x)3 thin film for photovoltaic application

H Deng, S Yuan, X Yang, J Zhang… - Progress in …, 2018 - Wiley Online Library
Abstract Sb2 (SexS1− x) 3 alloy materials with tunable bandgaps combining the advantages
of Sb2S3 and Sb2Se3 showed high potential in low cost, non‐toxicity, and high stability …

Influence of Bi content on linear and nonlinear optical properties of As40Se60-xBix chalcogenide thin films

M Behera, R Naik, C Sripan, R Ganesan… - Current Applied …, 2019 - Elsevier
The manuscript reports the effect of Bi content on the linear and nonlinear optical properties
as well as the structural and physical properties in thermally evaporated As 40 Se 60-x Bi x …

Nanorod-textured Sb2 (S, Se) 3 bilayer with enhanced light harvesting and accelerated charge extraction for high-efficiency Sb2 (S, Se) 3 solar cells

X Shi, F Zhang, S Dai, P Zeng, J Qu, J Song - Chemical Engineering …, 2022 - Elsevier
To produce a highly efficient solar cell, a near-ideal absorber allowing sufficient light
absorption and effective carrier transport is important. In this study, for the first time, a …

Influence of low energy Ag ion irradiation for formation of Bi2Se3 phase from Bi/GeSe2 heterostructure thin films

A Aparimita, R Naik, S Sahoo, C Sripan, R Ganesan - Applied Physics A, 2020 - Springer
The manuscript reports on the influence of 40 keV Ag–ve ion bombardment with different
fluences on the microstructural and optical properties of thermally evaporated Bi/GeSe 2 …

Influence of oxygen partial pressure on microstructure, optical properties, residual stress and laser induced damage threshold of amorphous HfO2 thin films

S Jena, RB Tokas, S Tripathi, KD Rao… - Journal of Alloys and …, 2019 - Elsevier
HfO 2 thin films were deposited by electron beam evaporation technique at different oxygen
(O 2) partial pressures. The films are characterized using x-ray diffraction, x-ray reflectivity …

Effect of O2/Ar gas flow ratio on the optical properties and mechanical stress of sputtered HfO2 thin films

S Jena, RB Tokas, JS Misal, KD Rao, DV Udupa… - Thin Solid Films, 2015 - Elsevier
HfO 2 thin films have been deposited on BK7 glass substrate by reactive RF sputtering
technique at different oxygen/argon (O 2/Ar) gas flow ratios. The films are polycrystalline in …

Optical band gap tuning by laser induced Bi diffusion into As 2 Se 3 film probed by spectroscopic techniques

M Behera, S Behera, R Naik - RSC advances, 2017 - pubs.rsc.org
Amorphous chalcogenide semiconducting materials are very sensitive to electromagnetic
radiation and are useful for infrared optics and play a pivotal role in modern technology. In …

Laser induced Bi diffusion in As40S60 thin films and the optical properties change probed by FTIR and XPS

R Naik, PP Sahoo, C Sripan, R Ganesan - Optical Materials, 2016 - Elsevier
Amorphous chalcogenide semiconducting materials are playing a pivotal role in modern
technology. Such type of materials are very sensitive to electromagnetic radiations which is …