Semiconductor nanowires have attracted extensive interest as one of the best-defined
classes of nanoscale building blocks for the bottom-up assembly of functional electronic and …

Molecular spins are promising building blocks of future quantum technologies thanks to the
unparalleled flexibility provided by chemistry, which allows the design of complex structures …

Using a non-contact atomic force microscope (nc-AFM), we examine continuous dangling
bond (DB) wire structures patterned on the hydrogen terminated silicon (100)-2× 1 surface …

The combination of graphene and silicon in hybrid electronic devices has attracted
increasing attention over the last decade. Here, a unique technology of graphene‐on‐silicon …

The high-performance room-temperature-operating Si single-electron transistors (SETs)
were devised in the form of the multiple quantum-dot (MQD) multiple tunnel junction (MTJ) …

In this paper, we propose a diagrammatic approach to single-electron spintronics and
develop a new analytical model for ferromagnetic single electron transistors (FSETs) using …

The progressive shrinking of MOS dimensions confronts critical issues while designing low
power consuming computational devices. The Single Electron Technology is one of the …

Vertically aligned Si nanoconstrictions have potential for applications of electronic, photonic
and phononic nanodevices. Herein, we report a featured method by utilizing the non …

In this paper, the design of all two-input logic gates is presented by only a single-stage
single electron box (SEB) for the first time. All gates are constructed based on a same circuit …

We investigate the low-temperature transport in 8-nm-diam Si junctionless nanowire field-
effect transistors fabricated by top down techniques with a wraparound gate and two …