Ballistic Electron Emission Microscopy (BEEM) has been shown to be a powerful tool for
nanometer-scale characterization of the spatial and electronic properties of semiconductor …

Semiconductor heterostructures, such as double-barrier resonant tunnelling diodes and
superlattices, are nowadays used for many applications. One very versatile and powerful …

This work investigates the interface resistivity of several heterostructures. Theoretical
simulations suggest that, apart from the doping impact, the band offset and the difference in …

In this work, ballistic electron transport through the lowest miniband of a biased GaAs–
AlGaAs superlattice is investigated by ballistic electron emission microscopy (BEEM). In the …

As the length scale for semiconductor heterostructures approaches the regime of the lattice
constant, our current theory for calculating ballistic hot-electron transport becomes …

If electrons are transferred across an interface between an area of high and low effective
mass, parallel momentum conservation leads to electron refraction effects, which are evident …

Ballistic electron emission microscopy (BEEM) is capable of injecting electrons into the L
valley of a GaAs-AlAs double-barrier resonant tunneling diode (DBRTD) coherently …

A three-terminal hot electron transistor is used to measure the normal energy distribution of
ballistic electrons generated by an electron injector utilizing an improved injector design. A …

The refraction of thermalized photoelectrons emitted into vacuum from p+-GaAs-(Cs, O) with
a negative electron affinity was observed. The refraction is caused by a jump in electron …

We introduce a solid-state version of ballistic electron emission microscopy/spectroscopy
(BEEM/BEES) on GaAs–AlGaAs heterostructures using a metal–insulator–metal (MIM) …