Gallium nitride (GaN) is an attractive material for high-frequency and high-power devices.
Due to the availability of relatively high-quality free-standing bulk GaN substrates, the …

This article provides a comprehensive review of wide and ultrawide bandgap power
electronic semiconductor devices, comparing silicon (Si), silicon carbide (SiC), gallium …

Wide bandgap semiconductors show superior material properties enabling potential power
device operation at higher temperatures, voltages, and switching speeds than current Si …

Despite silicon carbide's (SiC's) high breakdown electric field, high thermal conductivity and
wide bandgap, it faces certain reliability challenges when used to make conventional power …

During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …

It is worldwide accepted that a real breakthrough in the Power Electronics field mainly
comes from the development and use of Wide Band Gap (WBG) semiconductor devices …

Silicon carbide (4H-SiC) Schottky diodes have reached a mature level of technology and are
today essential elements in many applications of power electronics. In this context, the study …

A graphite capping layer has been evaluated to protect the surface of patterned and
selectively implanted 4H–SiC epitaxial wafers during post-implantation annealing. AZ …

This paper presents the design and experimental analysis of 1200-V 4H-silicon carbide
(SiC) merged PiN Schottky (MPS) diodes. Design considerations and device performances …

The recent progress in the development of high-voltage SiC, GaN and diamond power
devices is reviewed. Topics covered include the performance of various rectifiers and …