[HTML][HTML] Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

AC Ferrari, F Bonaccorso, V Fal'Ko, KS Novoselov… - Nanoscale, 2015 - pubs.rsc.org
We present the science and technology roadmap for graphene, related two-dimensional
crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts …

Graphene‐Based Microwave Circuits: A Review

M Saeed, P Palacios, MD Wei, E Baskent… - Advanced …, 2022 - Wiley Online Library
Over the past two decades, research on 2D materials has received much interest. Graphene
is the most promising candidate regarding high‐frequency applications thus far due to is …

Gigahertz integrated graphene ring oscillators

E Guerriero, L Polloni, M Bianchi, A Behnam… - ACS …, 2013 - ACS Publications
Ring oscillators (ROs) are the most important class of circuits used to evaluate the
performance limits of any digital technology. However, ROs based on low-dimensional …

Graphene Field-Effect Transistors With High Extrinsic and

M Bonmann, M Asad, X Yang… - IEEE Electron …, 2018 - ieeexplore.ieee.org
In this letter, we report on the performance of graphene field-effect transistors (GFETs) in
which the extrinsic transit frequency () and maximum frequency of oscillation () showed …

Optically modulated tunneling current of dressed electrons in graphene and a dice lattice

A Iurov, L Zhemchuzhna, G Gumbs, D Huang, P Fekete - Physical Review B, 2022 - APS
Based on the transmission coefficient of tunneling electrons, we have presented tunneling
current and conductivity across a square-potential barrier for both graphene and α-T 3 …

Lateral graphene heterostructure field-effect transistor

JS Moon, H Seo, F Stratan, M Antcliffe… - IEEE Electron …, 2013 - ieeexplore.ieee.org
We report the first experimental demonstration of a lateral graphene heterostructure field-
effect transistor (HFET) at wafer scale, where the graphene heterostructure channel consists …

A W-band MMIC resistive mixer based on epitaxial graphene FET

O Habibpour, ZS He, W Strupinski… - IEEE Microwave and …, 2017 - ieeexplore.ieee.org
This letter presents the design, fabrication and characterization of the first graphene based
monolithic microwave integrated circuit (MMIC) in microstrip technology operating in W …

A 185–215-GHz subharmonic resistive graphene FET integrated mixer on silicon

MA Andersson, Y Zhang, J Stake - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
A 200-GHz integrated resistive subharmonic mixer based on a single chemical vapor
deposition graphene field-effect transistor (G-FET) is demonstrated experimentally. This …

Controlling the threshold voltage of a semiconductor field-effect transistor by gating its graphene gate

L Anzi, A Tuktamyshev, A Fedorov, A Zurutuza… - npj 2D Materials and …, 2022 - nature.com
The threshold voltage of a field-effect transistor (FET) determines its switching and limits the
scaling of the supply voltage in the logic gates. Here we demonstrate a GaAs FET with a …

Aligned Carbon Nanotubes-Based Radiofrequency Transistors for Amplitude Amplification and Frequency Conversion at Millimeter Wave Band

J Qian, X Cheng, J Zhou, J Cao, L Ding - ACS nano, 2023 - ACS Publications
Aligned carbon nanotubes (ACNTs) have been considered as a promising candidate
semiconductor with great potential in radiofrequency (RF) electronics due to their high …