Binary metal oxide-based resistive switching memory devices: A status review
Semiconductor memories are essential ingredients of modern electronic devices. Resistive
Random-Access Memories (RRAMs) have emerged as better alternatives for conventional …
Random-Access Memories (RRAMs) have emerged as better alternatives for conventional …
To be or not to be–review of electrical bistability mechanisms in polymer memory devices
Organic memory devices are a rapidly evolving field with much improvement in device
performance, fabrication, and application. But the reports have been disparate in terms of …
performance, fabrication, and application. But the reports have been disparate in terms of …
[HTML][HTML] Multibit memory operation of metal-oxide bi-layer memristors
Emerging nanoionic memristive devices are considered as the memory technology of the
future and have been winning a great deal of attention due to their ability to perform fast and …
future and have been winning a great deal of attention due to their ability to perform fast and …
[HTML][HTML] Withania somnifera: Progress towards a Pharmaceutical Agent for Immunomodulation and Cancer Therapeutics
VK Kashyap, G Peasah-Darkwah, A Dhasmana… - Pharmaceutics, 2022 - mdpi.com
Chemotherapy is one of the prime treatment options for cancer. However, the key issues
with traditional chemotherapy are recurrence of cancer, development of resistance to …
with traditional chemotherapy are recurrence of cancer, development of resistance to …
Superior resistive switching memory and biological synapse properties based on a simple TiN/SiO 2/p-Si tunneling junction structure
X Yan, Z Zhou, B Ding, J Zhao, Y Zhang - Journal of Materials …, 2017 - pubs.rsc.org
In this study, a simple TiN/SiO2/p-Si tunneling junction structure was fabricated via thermal
oxidation growth on a Si substrate annealed at 600° C. After electroforming, the number of …
oxidation growth on a Si substrate annealed at 600° C. After electroforming, the number of …
Spatially-Resolved Thermometry of Filamentary Nanoscale Hot Spots in TiO2 Resistive Random Access Memories to Address Device Variability
Resistive random access memories (RRAM), based on the formation and rupture of
conductive nanoscale filaments, have attracted increased attention for application in …
conductive nanoscale filaments, have attracted increased attention for application in …
[HTML][HTML] To the issue of the memristor's hrs and lrs states degradation and data retention time
AV Fadeev, KV Rudenko - Russian Microelectronics, 2021 - Springer
In this review of experimental studies, the retention time and endurance of memristor RRAM
memory elements based on reversible resistive switching in oxide dielectrics are studied …
memory elements based on reversible resistive switching in oxide dielectrics are studied …
A data-driven verilog-a reram model
The translation of emerging application concepts that exploit resistive random access
memory (ReRAM) into large-scale practical systems requires realistic yet computationally …
memory (ReRAM) into large-scale practical systems requires realistic yet computationally …
Highly Flexible and Asymmetric Hexagonal‐Shaped Crystalline Structured Germanium Dioxide‐Based Multistate Resistive Switching Memory Device for Data Storage …
With the increase of big data and artificial intelligence (AI) applications, fast and energy‐
efficient computing is critical in future electronics. Fortunately, nonvolatile resistive memory …
efficient computing is critical in future electronics. Fortunately, nonvolatile resistive memory …
Oxygen Vacancies Control Transition of Resistive Switching Mode in Single-Crystal TiO2 Memory Device
Epitaxial TiO2 thin films were grown by radio-frequency magnetron sputtering on conductive
Nb-SrTiO3 substrates. X-ray photoelectron spectroscopy reveals that the oxygen vacancies …
Nb-SrTiO3 substrates. X-ray photoelectron spectroscopy reveals that the oxygen vacancies …