[HTML][HTML] Recent advances in wide-spectrum photodetectors based on low-dimensional semiconductors

Y Yu, Y Hu, J Yang, Z Wei - Materials Today Electronics, 2022 - Elsevier
Compared with three-dimensional semiconductors, low-dimensional (LD) semiconductors
have unique atomic arrangements and excellent optical and electrical characteristics, such …

Highly responsive SnSe/GaN heterostructure-based UVC-SWIR broadband photodetector

P Vashishtha, M Kumar, P Prajapat, J Ahmed… - Materials Science in …, 2023 - Elsevier
Broadband photodetection spans the ultraviolet-C (250 nm) to shortwave-infrared (1250 nm)
range is essential and desirable for various applications such as optical communication …

Reconfigurable band alignment of (, W) multilayer van der Waals heterostructures for photoelectric applications

X Li, T Liu, L Li, M He, C Shen, J Li, C Xia - Physical Review B, 2022 - APS
Integrating two-dimensional materials into van der Waals heterostructures (vdWHs) is
considered to be an efficient strategy for multifunctional devices. Here, the m-GaS/n-MoTe 2 …

High Sensitive and Stable UV–Vis Photodetector Based on MoS2/MoO3 vdW Heterojunction

H Li, T Zhang, Z Yi, X Chen, Z Dai… - ACS Applied Materials & …, 2024 - ACS Publications
The development of new high-performance photodetectors (PDs) is currently focused on
achieving small size, low power consumption, low cost, and large bandwidth. Two …

High-performance self-powered ultraviolet to near-infrared photodetector based on WS2/InSe van der Waals heterostructure

J Chen, Z Zhang, Y Ma, J Feng, X Xie, X Wang, A Jian… - Nano Research, 2023 - Springer
Abstract van der Waals heterostructures (vdWHs) based on two-dimensional (2D) materials
without the crystal lattice matching constraint have great potential for high-performance …

Self-bias Mo–Sb–Ga multilayer photodetector encompassing ultra-broad spectral response from UV–C to IR–B

P Vashishtha, A Dash, S Walia, G Gupta - Optics & Laser Technology, 2025 - Elsevier
Achieving an ultra-broad spectral response in a self-bias detector is a formidable challenge
that persists in optoelectronics that necessitates innovative solutions. We propose a unique …

Ultrasensitive Near-Infrared Polarization Photodetectors with Violet Phosphorus/InSe van der Waals Heterostructures

W Ahmad, MU Rehman, L Pan, W Li, J Yi… - … Applied Materials & …, 2024 - ACS Publications
Near-infrared (NIR) polarization photodetectors with two-dimensional (2D) semiconductors
and their van der Waals (vdW) heterostructures have presented great impact for the …

High‐Sensitivity Adjustable Operating Modes Multifunctional Detector Based on InSe/VO2 Heterojunction for Light and Electric Field Perception

L Wang, M Deng, X Xu, Z Hou, M Li… - Advanced Optical …, 2023 - Wiley Online Library
High‐performance and versatile multifunctional photodetection devices are essential for
various applications, but they often face severe challenges, such as limited operating modes …

High-performance UV-Vis-NIR photomultiplier detectors assisted by interfacial trapped-electrons

X Li, Y Tang, C Wang, T Wei, D Lv, M Guo… - Journal of Materials …, 2023 - pubs.rsc.org
UV–Vis–NIR photodetectors play a crucial role in numerous scientific and commercial
applications. It is a great challenge to realize UV–Vis–NIR photodetectors due to the limited …

In Situ Formation of SnSe2/SnSe Vertical Heterostructures toward Polarization Selectable Band Alignments

R Ge, B Liu, F Sui, Y Zheng, Y Yu, K Wang, R Qi… - Small, 2024 - Wiley Online Library
Abstract 2D van der Waals (vdW) layered semiconductor vertical heterostructures with
controllable band alignment are highly desired for nanodevice applications including …