D 0 3-ordered Fe 3 Si, which is one of the ferromagnetic Heusler compounds, has so far
been formed by high-temperature heat treatments. Here, we demonstrate room-temperature …

Abstract Effect of strain on the magnetic anisotropy (MA) and Curie temperature (T c) of
monolayer Fe 2 Si and Fe 2 Ge with out-of-plane/perpendicular MA is performed by using …

The defect structure leads to the fracture and recombination of chemical bonds, lattice
distortion, electron localization, etc., which has a significant improvement on the physical …

Ferromagnetic Fe x Ge1− x with x= 2%–9% are obtained by Fe deposition onto Ge (001) at
high temperatures (500° C). Low energy electron diffraction (LEED) investigation evidenced …

Revealing the “structure–property” relationship is nontrivial for the application of materials.
The magnetic configurations of FeGe are strongly dependent on the internal structures and …

Abstract Ferromagnet-semiconductor (FM-SC) alloy phase with room temperature
ferromagnetic properties at the interfaces of FM/SC heterostructures are believed to improve …

We report an observation of uniaxial magnetic anisotropy along the [100] crystallographic
direction in crystalline Fe film grown on Ge buffers deposited on a (001) GaAs substrate. As …

Single-crystalline free-standing hexagonal Fe1. 3Ge nanowires (NWs) are synthesized for
the first time using a chemical vapor transport process without using any catalyst …

We study epitaxial growth and magnetic properties of ferromagnetic alloys, Fe 3 Si and
CoFe, on low-temperature-grown germanium (LT–Ge) layers. Despite high-quality epitaxial …

Fe 3 Si/Ge (Fe, Si)/Fe 3 Si thin-film stacks were grown by a combination of molecular beam
epitaxy and solid-phase epitaxy (Ge on Fe 3 Si). The stacks were analyzed using electron …