Atomic layer etching (ALE) is a technique for removing thin layers of material using
sequential reaction steps that are self-limiting. ALE has been studied in the laboratory for …

The unique plasma-specific features and physical phenomena in the organization of
nanoscale soild-state systems in a broad range of elemental composition, structure, and …

This paper presents an in-depth overview of the present status and novel developments in
the field of plasma processing of low dielectric constant (low-k) materials developed for …

Power-modulated (pulsed) plasmas have demonstrated several advantages compared to
continuous wave (CW) plasmas. Specifically, pulsed plasmas can result in a higher etching …

This review paper presents historical perspectives, recent advances and future directions in
the multidisciplinary research field of plasma nanoscience. The current status and future …

Plasma etching processes at the 22 nm technology node and below will have to satisfy
multiple stringent scaling requirements of microelectronics fabrication. To satisfy these …

This paper presents an in-depth overview of the application and impact of UV/VUV light in
advanced interconnect technology. UV light application in BEOL historically was mainly …

Silicon nitride spacer etching realization is considered today as one of the most challenging
of the etch process for the new devices realization. For this step, the atomic etch precision to …

The etch characteristics of silicon trenches masked with various SiO 2/Si 3 N 4 pattern
distances were investigated using synchronously and asynchronously pulse modes in …

MICRO-LEDs (n-LEDs) HAVE been engaged in the next-generation display technology and
evolved for various applications from several electronics manufacturers and institutions. The …