Recent advances on dielectrics technology for SiC and GaN power devices
Silicon carbide (SiC) and gallium nitride (GaN) devices are considered as optimal solutions
to meet the requirements of the modern power electronics. In fact, they can allow an …
to meet the requirements of the modern power electronics. In fact, they can allow an …
Nanoarchitectonics for wide bandgap semiconductor nanowires: Toward the next generation of nanoelectromechanical systems for environmental monitoring
Semiconductor nanowires are widely considered as the building blocks that revolutionized
many areas of nanosciences and nanotechnologies. The unique features in nanowires …
many areas of nanosciences and nanotechnologies. The unique features in nanowires …
CVD graphene/SiC UV photodetector with enhanced spectral responsivity and response speed
A self-powered, high-performance graphene/Silicon Carbide (G/4H-SiC) ultraviolet Schottky
junction photodetector has been fabricated, and the effect of using monolayer and bilayer …
junction photodetector has been fabricated, and the effect of using monolayer and bilayer …
[HTML][HTML] Modelling the inhomogeneous SiC Schottky interface
For the first time, the IVT dataset of a Schottky diode has been accurately modelled,
parameterised, and fully fit, incorporating the effects of interface inhomogeneity, patch pinch …
parameterised, and fully fit, incorporating the effects of interface inhomogeneity, patch pinch …
SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3
In this Letter, we report a quantitative analysis of the n-type doping occurring at SiO 2/4H-
SiC interfaces during post-deposition-annealing (PDA) in N 2 O or POCl 3 of a 45 nm thick …
SiC interfaces during post-deposition-annealing (PDA) in N 2 O or POCl 3 of a 45 nm thick …
Barrier height inhomogeneities induced anomaly in thermal sensitivity of Ni/4H-SiC Schottky diode temperature sensor
V Kumar, AS Maan, J Akhtar - … of Vacuum Science & Technology B, 2014 - pubs.aip.org
This paper presents the thermal sensitivity variation trend of Ni/4H-nSiC (0001) Schottky
diode based temperature sensor, equipped with floating metal guard ring and oxide field …
diode based temperature sensor, equipped with floating metal guard ring and oxide field …
High voltage response of graphene/4H-SiC UV photodetector with low level detection
A self-powered graphene/silicon carbide (G/4H-SiC) ultraviolet photodetector of a pin like-
structure with high voltage response has been fabricated to detect and measure low …
structure with high voltage response has been fabricated to detect and measure low …
Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature
A Frazzetto, F Giannazzo, RL Nigro… - Journal of Physics D …, 2011 - iopscience.iop.org
In this paper, the transport properties of alloyed Ti/Al Ohmic contacts formed on p-type Al-
implanted silicon carbide (4H-SiC) were studied. The morphology of p-type implanted 4H …
implanted silicon carbide (4H-SiC) were studied. The morphology of p-type implanted 4H …
Bias temperature instability in SiC metal oxide semiconductor devices
C Yang, S Wei, D Wang - Journal of Physics D: Applied Physics, 2021 - iopscience.iop.org
Although silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs)
are commercially available, bias temperature instability (BTI) defined as shifts in V th in SiC …
are commercially available, bias temperature instability (BTI) defined as shifts in V th in SiC …
Diameter dependent thermal sensitivity variation trend in Ni/4H-SiC Schottky diode temperature sensors
This report is on the diameter dependent thermal sensitivity variation trend of Ni/4H-nSiC
Schottky barrier diode (SBD) temperature sensors. Scaled SBDs of 2, 1.6, and 1.2 mm in …
Schottky barrier diode (SBD) temperature sensors. Scaled SBDs of 2, 1.6, and 1.2 mm in …