With the emergence of ferroelectric HfO 2-and ZrO 2-based thin films, the topic of
ferroelectric memories has been experiencing a renaissance. These novel ferroelectric …

Abstract An Energy-Efficient Computing-in-Memory (CiM) cell design utilizing a Negative
Capacitance (NC) FET has been proposed to support computing architectures for Deep …

Abstract A Negative Capacitance Field effet transistor (NCFET) based Dual split control
(DSC) 6T-SRAM cell has been designed and explored with Computing-in memory (CiM) …

Emerging voltage reference generators (VRGs) are of great demand for low-power
applications in recent years. However, keeping good linearity for VRGs in deep …

A Negative capacitance field effect transistor (NCFET) based 6T SRAM based Computing-in
memory (CIM) cell has been designed and explored for energy efficient demonstration of …

In order to address and resolve the significant problem of gate-induced drain leakage (GIDL)
current and enhance device reliability, band-to-band tunnelling (BTBT), and OFF-state …

A 6T-SRAM bitcell with the footprint of only two transistors is demonstrated by stacking four n-
type vertical gate-all-around transistors (VFET) on two pFinFETs. The local interconnects are …

Negative Capacitance FET (NCFET) is one of the most promising variants of the emerging
steep-slope transistors, able to overcome the? Boltzmann limit'. The ferroelectric layer in the …

Energy saving is a most promising sector of research and development. Nowadays, energy
saving or low power is becoming a critical challenge that is most important for the future of …

So far, there has been a continuous and steady growth of the market for mobile computing
devices, wireless systems, and biomedical implantable devices [1–5]. This has led to a …