Electrostatic gating and intercalation in 2D materials

Y Wu, D Li, CL Wu, HY Hwang, Y Cui - Nature Reviews Materials, 2023 - nature.com
The doping or the alteration of crystals with guest species to obtain desired properties has
long been a research frontier in materials science. However, the closely packed lattice …

Artificial neuron devices

K He, C Wang, Y He, J Su, X Chen - Chemical Reviews, 2023 - ACS Publications
Efforts to design devices emulating complex cognitive abilities and response processes of
biological systems have long been a coveted goal. Recent advancements in flexible …

2D materials in flexible electronics: recent advances and future prospectives

AK Katiyar, AT Hoang, D Xu, J Hong, BJ Kim… - Chemical …, 2023 - ACS Publications
Flexible electronics have recently gained considerable attention due to their potential to
provide new and innovative solutions to a wide range of challenges in various electronic …

Printed transistors made of 2D material-based inks

S Conti, G Calabrese, K Parvez, L Pimpolari… - Nature Reviews …, 2023 - nature.com
Large-area electronics for the Internet of Things requires a new generation of light-weight,
flexible, low-power electronics, based on advanced materials able to provide high …

Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors

N Li, Q Wang, C Shen, Z Wei, H Yu, J Zhao, X Lu… - Nature …, 2020 - nature.com
Atomically thin molybdenum disulfide (MoS2) is a promising semiconductor material for
integrated flexible electronics due to its excellent mechanical, optical and electronic …

2D transition metal dichalcogenides

S Manzeli, D Ovchinnikov, D Pasquier… - Nature Reviews …, 2017 - nature.com
Graphene is very popular because of its many fascinating properties, but its lack of an
electronic bandgap has stimulated the search for 2D materials with semiconducting …

Recent progress and future prospects of 2D‐based photodetectors

N Huo, G Konstantatos - Advanced Materials, 2018 - Wiley Online Library
Conventional semiconductors such as silicon‐and indium gallium arsenide (InGaAs)‐based
photodetectors have encountered a bottleneck in modern electronics and photonics in terms …

A review on synthesis of graphene, h-BN and MoS2 for energy storage applications: Recent progress and perspectives

R Kumar, S Sahoo, E Joanni, RK Singh, RM Yadav… - Nano research, 2019 - Springer
The significance of graphene and its two-dimensional (2D) analogous inorganic layered
materials especially as hexagonal boron nitride (h-BN) and molybdenum disulphide (MoS 2) …

Two-dimensional semiconductors for transistors

M Chhowalla, D Jena, H Zhang - Nature Reviews Materials, 2016 - nature.com
In the quest for higher performance, the dimensions of field-effect transistors (FETs) continue
to decrease. However, the reduction in size of FETs comprising 3D semiconductors is limited …

Flexible electronics based on 2D transition metal dichalcogenides

D Jiang, Z Liu, Z Xiao, Z Qian, Y Sun, Z Zeng… - Journal of Materials …, 2022 - pubs.rsc.org
Flexible devices play an important role in various fields such as electronics, industry,
healthcare, military, space exploration, and so on. Traditional materials used for flexible …